StrongIRFET IRFB7540PbF IRFS7540PbF IRFSL7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications D V 60V DSS BLDC Motor drive applications Battery powered circuits R typ. 4.2m DS(on) Half-bridge and full-bridge topologies G Synchronous rectifier applications max 5.1m Resonant mode power supplies S I 110A D OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters D D Benefits S S S D G D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness G G Fully Characterized Capacitance and Avalanche SOA TO-220AB D2Pak TO-262 Enhanced body diode dV/dt and dI/dt Capability IRFB7540PbF IRFS7540PbF IRFSL7540PbF Lead-Free, RoHS Compliant G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFB7540PbF TO-220 Tube 50 IRFB7540PbF IRFSL7540PbF TO-262 Tube 50 IRFSL7540PbF Tube 50 IRFS7540PbF IRFS7540PbF D2-Pak Tape and Reel Left 800 IRFS7540TRLPbF 120 14 I = 65A D 100 12 80 10 T = 125C J 60 8 6 40 20 4 T = 25C J 0 2 25 50 75 100 125 150 175 4 6 8 10 12 14 16 18 20 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 6, 2014 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFB/S/SL7540PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 110 D C GS I T = 100C Continuous Drain Current, V 10V 80 A D C GS I Pulsed Drain Current 430 DM P T = 25C Maximum Power Dissipation 160 W D C Linear Derating Factor 1.1 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 180 AS (Thermally limited) mJ E 313 Single Pulse Avalanche Energy AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.95 JC R Case-to-Sink, Flat Greased Surface (TO-220) 0.50 CS C/W R Junction-to-Ambient (TO-220) 62 JA 2 R Junction-to-Ambient (PCB Mount) (D Pak) 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 48 mV/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 4.2 5.1 V = 10V, I = 65A m DS(on) GS D 5.4 V = 6.0V, I = 33A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D 1.0 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.2 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 86H, R = 50 , I = 65A, V =10V. Jmax J G AS GS I 65A, di/dt 1130A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: