IRFS3006PbF IRFSL3006PbF HEXFET Power MOSFET Applications D V 60V DSS High Efficiency Synchronous Rectification in SMPS R typ. 2.0m DS(on) Uninterruptible Power Supply High Speed Power Switching max. 2.5m Hard Switched and High Frequency Circuits G I 270A D (Silicon Limited) I 195A S D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness D Fully Characterized Capacitance and Avalanche SOA S Enhanced body diode dV/dt and dI/dt Capability S D G Lead-Free G 2 TO-262 D Pak IRFSL3006PbF IRFS3006PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 270 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 191 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I Pulsed Drain Current 1080 DM P T = 25C 375 W Maximum Power Dissipation D C Linear Derating Factor 2.5 W/C V 20 V GS Gate-to-Source Voltage dv/dt Peak Diode Recovery 10 V/ns T -55 to + 175 J Operating Junction and T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Avalanche Characteristics Single Pulse Avalanche Energy E 320 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.4 JC C/W R Junction-to-Ambient 40 JA www.irf.com 1 10/06/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 2.0 2.5 V = 10V, I = 170A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.0 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 280 S V = 25V, I = 170A DS D Q Total Gate Charge 200 300 nC I = 170A g D Q Gate-to-Source Charge 37 V =30V gs DS Q Gate-to-Drain Mille) Charge 60 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 140 I = 170A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 16 ns V = 39V d(on) DD t Rise Time 182 I = 170A r D t Turn-Off Delay Time 118 R = 2.7 d(off) G t Fall Time 189 V = 10V f GS C Input Capacitance 8970 pF V = 0V iss GS C Output Capacitance 1020 V = 50V oss DS C Reverse Transfer Capacitance 534 = 1.0MHz, See Fig. 5 rss C eff. (ER) 1480 V = 0V, V = 0V to 48V , See Fig. 11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 1920 V = 0V, V = 0V to 48V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol D S 270 (Body Diode) showing the G I Pulsed Source Current 1080 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 170A, V = 0V SD J S GS t Reverse Recovery Time 44 ns T = 25C V = 51V, rr J R T = 125C I = 170A 48 J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 63 nC rr J T = 125C 77 J I Reverse Recovery Current 2.4 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 170A, di/dt 1360A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 195A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.022mH Jmax J When mounted on 1 square PCB (FR-4 or G-10 Material). For recom R = 25, I = 170A, V =10V. Part not recommended for use mended footprint and soldering techniques refer to application note AN-994. GS G AS above this value . JC 2 www.irf.com