96186A IRFS4010PbF IRFSL4010PbF HEXFET Power MOSFET Applications D V 100V DSS High Efficiency Synchronous Rectification in SMPS R typ. 3.9m Uninterruptible Power Supply DS(on) High Speed Power Switching G max. 4.7m Hard Switched and High Frequency Circuits I 180A D S Benefits Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness Fully Characterized Capacitance and Avalanche SOA S S D Enhanced body diode dV/dt and dI/dt Capability G G Lead-Free 2 D Pak TO-262 IRFS4010PbF IRFSL4010PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 180 D C GS I T = 100C Continuous Drain Current, V 10V 127 A D C GS I Pulsed Drain Current 720 DM P T = 25C 375 W D C Maximum Power Dissipation Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS 31 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 318 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 JC C/W R 40 JA Junction-to-Ambient (PCB Mount) www.irf.com 1 07/07/11 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.9 4.7 V = 10V, I = 106A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 100V, V = 0V DSS DS GS A 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.0 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 189 S V = 25V, I = 106A DS D Q Total Gate Charge 143 215 I = 106A g D Q Gate-to-Source Charge 38 V = 50V gs DS nC Q Gate-to-Drain Mille) Charge 50 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 93 I = 106A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 21 V = 65V d(on) DD t Rise Time 86 I = 106A r D ns t Turn-Off Delay Time 100 R = 2.7 d(off) G t Fall Time 77 V = 10V f GS C Input Capacitance 9575 V = 0V iss GS C Output Capacitance 660 V = 50V oss DS C Reverse Transfer Capacitance 270 = 1.0MHz See Fig.5 pF rss C eff. (ER) 757 V = 0V, V = 0V to 80V See Fig.11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 1112 V = 0V, V = 0V to 80V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 180 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 720 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 106A, V = 0V SD J S GS t T = 25C V = 85V, Reverse Recovery Time 72 rr J R ns T = 125C I = 106A 81 J F di/dt = 100A/s Q Reverse Recovery Charge 210 T = 25C rr J nC T = 125C 268 J I T = 25C Reverse Recovery Current 5.3 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.057mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25, I = 106A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value . When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 106A, di/dt 1319A/ s, V V , T 175C. mended footprint and soldering echniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. JC 2 www.irf.com