IRFSL4229PbF Features Key Parameters Advanced Process Technology V min 250 V Low Q for Fast Response DS G High Repetitive Peak Current Capability for V typ. 300 V DS (Avalanche) Reliable Operation R typ. 10V m 42 DS(ON) Short Fall & Rise Times for Fast Switching I max T = 100C 91 A RP C 175C Operating Junction Temperature for T max 175 C Improved Ruggedness J Repetitive Avalanche Capability for Robustness D D and Reliability S D G G TO-262 S IRFSL4229PbF GD S Gate Drain Source Description HEXFET Power MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this MOSFET are 175C operating juntion temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device Absolute Maximum Ratings Max. Parameter Units V Gate-to-Source Voltage 30 V GS I T = 25C Continuous Drain Current, V 10V 45 A D C GS I T = 100C Continuous Drain Current, V 10V 32 D C GS I 180 Pulsed Drain Current DM I T = 100C Repetitive Peak Current 91 RP C P T = 25C 330 Power Dissipation W D C P T = 100C 190 Power Dissipation D C Linear Derating Factor 2.2 W/C T Operating Junction and -40 to + 175 C J T Storage Temperature Range STG Soldering Temperature for 10 seconds 300 10lb in (1.1N m) Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 0.45* JC Junction-to-Ambient R 62 JA * R (end of life) for TO-262 = 0.65C/W. This is the maximum measured value after 1000 temperature JC cycles from -55 to 150C and is accounted for by the physical wearout of the die attach medium. Notes through are on page 8 www.irf.com 1 01/04/10 Electrical Characteristics T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 250 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 210 mV/C D DSS J V = 10V, I = 26A R Static Drain-to-Source On-Resistance 42 48 m DS(on) GS D V = V , I = 250A V Gate Threshold Voltage 3.0 5.0 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -14 mV/C GS(th) J I V = 250V, V = 0V Drain-to-Source Leakage Current 20 DSS DS GS A V = 250V, V = 0V, T = 125C 200 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 GSS GS nA V = -20V Gate-to-Source Reverse Leakage -100 GS g V = 25V, I = 26A Forward Transconductance 83 S fs DS D Q Total Gate Charge 72 110 V = 125V, I = 26A, V = 10V DD D GS g nC Q Gate-to-Drain Charge 26 gd t V = 125V, V = 10V Turn-On Delay Time 18 d(on) DD GS I = 26A t Rise Time 31 r D ns t R = 2.4 Turn-Off Delay Time 30 d(off) G t Fall Time 21 See Fig. 22 f t V = 200V, V = 15V, R = 4.7 Shoot Through Blocking Time 100 ns st DD GS G L = 220nH, C= 0.3F, V = 15V GS 790 V = 200V, R = 4.7 T = 25C E Energy per Pulse , PULSE DS G J J L = 220nH, C= 0.3F, V = 15V GS 1390 V = 200V, R = 4.7 T = 100C , DS G J C V = 0V Input Capacitance 4560 GS iss V = 25V C Output Capacitance 390 DS oss pF C = 1.0MHz, Reverse Transfer Capacitance 100 rss V = 0V, V = 0V to 200V C eff. Effective Output Capacitance 290 GS DS oss L Internal Drain Inductance Between lead, D D 4.5 and center of die contact nH G L Internal Source Inductance S 7.5 S Avalanche Characteristics Typ. Max. Parameter Units E 130 Single Pulse Avalanche Energy mJ AS E Repetitive Avalanche Energy 33 mJ AR V 300 Repetitive Avalanche Voltage V DS(Avalanche) I Avalanche Current 26 A AS Diode Characteristics Conditions Parameter Min. Typ. Max. Units I T = 25C MOSFET symbol Continuous Source Current S C 45 (Body Diode) showing the A I integral reverse Pulsed Source Current SM 180 p-n junction diode. (Body Diode) V T = 25C, I = 26A, V = 0V Diode Forward Voltage 1.3 V SD J S GS T = 25C, I = 26A, V = 50V t Reverse Recovery Time 190 290 ns J F DD rr Q Reverse Recovery Charge 840 1260 nC di/dt = 100A/s rr 2 www.irf.com