96203 IRFS4620PbF IRFSL4620PbF HEXFET Power MOSFET Applications D V 200V DSS High Efficiency Synchronous Rectification in SMPS R typ. Uninterruptible Power Supply 63.7m DS(on) High Speed Power Switching G max. 77.5m Hard Switched and High Frequency Circuits I 24A D S Benefits Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness Fully Characterized Capacitance and Avalanche SOA S S D Enhanced body diode dV/dt and dI/dt Capability G G 2 Lead-Free D Pak TO-262 IRFS4620PbF IRFSL4620PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 24 D C GS I T = 100C Continuous Drain Current, V 10V 17 A D C GS I 100 DM Pulsed Drain Current P T = 25C W Maximum Power Dissipation 144 D C 0.96 Linear Derating Factor W/C V V Gate-to-Source Voltage 20 GS 54 dv/dt Peak Diode Recovery V/ns T -55 to + 175 Operating Junction and J T Storage Temperature Range STG C 300 Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 113 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.045 C/W R Junction-to-Ambient (PCB Mount) 40 JA www.irf.com 1 12/18/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 63.7 77.5 = 10V, I = 15A V DS(on) m GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 100A GS(th) DS GS D I Drain-to-Source Leakage Current 20 V = 200V, V = 0V DSS DS GS A 250 V = 200V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.6 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 37 S V = 50V, I = 15A DS D Q Total Gate Charge 25 38 I = 15A g D Q Gate-to-Source Charge 8.2 V = 100V gs DS nC Q Gate-to-Drain Mille) Charge 7.9 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 17 I = 15A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 13.4 V = 130V d(on) DD t Rise Time 22.4 I = 15A r D ns t Turn-Off Delay Time 25.4 R = 7.3 d(off) G t Fall Time 14.8 V = 10V f GS C Input Capacitance 1710 V = 0V iss GS C Output Capacitance 125 V = 50V oss DS C Reverse Transfer Capacitance 30 pF = 1.0MHz (See Fig.5) rss C eff. (ER) 113 V = 0V, V = 0V to 160V (See Fig.11) Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 317 V = 0V, V = 0V to 160V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 24 (Body Diode) showing the A I G Pulsed Source Current integral reverse SM 100 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 15A, V = 0V SD J S GS t T = 25C V = 100V, Reverse Recovery Time 78 rr J R ns T = 125C I = 15A 99 J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 294 rr J nC 432 T = 125C J I T = 25C Reverse Recovery Current 7.6 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 1.0mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25, I = 15A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value . When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 15A, di/dt 634A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. 2 www.irf.com