X-On Electronics has gained recognition as a prominent supplier of IRFSL7537PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFSL7537PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFSL7537PBF Infineon

IRFSL7537PBF electronic component of Infineon
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See Product Specifications
Part No.IRFSL7537PBF
Manufacturer: Infineon
Category: MOSFETs
Description: International Rectifier MOSFET 60V Single N-Channel HEXFET Power
Datasheet: IRFSL7537PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.322 ea
Line Total: USD 3.32 
Availability - 25
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 3.322
10 : USD 2.464
100 : USD 1.914
500 : USD 1.749
1000 : USD 1.683

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
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We are delighted to provide the IRFSL7537PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFSL7537PBF and other electronic components in the MOSFETs category and beyond.

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StrongIRFET IRFB7534PbF IRFS7534PbF IRFSL7534PbF HEXFET Power MOSFET Application Brushed Motor drive applications V 60V D DSS BLDC Motor drive applications Battery powered circuits R typ. 2.0m DS(on) Half-bridge and full-bridge topologies max 2.4m G Synchronous rectifier applications I 232A Resonant mode power supplies D (Silicon Limited) S OR-ing and redundant power switches I 195A D (Package Limited) DC/DC and AC/DC converters DC/AC Inverters D D Benefits S S S D G Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D G G Fully Characterized Capacitance and Avalanche SOA 2 TO-220AB Enhanced body diode dV/dt and dI/dt Capability D Pak TO-262 IRFB7534PbF Lead-Free, RoHS Compliant IRFS7534PbF IRFSL7534PbF G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFB7534PbF TO-220 Tube 50 IRFB7534PbF IRFSL7534PbF TO-262 Tube 50 IRFSL7534PbF Tube 50 IRFS7534PbF 2 IRFS7534PbF D -Pak Tape and Reel Left 800 IRFS7534TRLPbF 15 250 I = 100A Limited by package D 12 200 9 150 6 100 T = 125C J 3 50 T = 25C J 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) V Gate -to -Source Voltage (V) C GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 2017-04-05 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRFB/S/SL7534PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 232 D C GS T = 100C Continuous Drain Current, V 10V (Silicon Limited) 164 I D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I Pulsed Drain Current 944* DM P T = 25C Maximum Power Dissipation 294 W D C Linear Derating Factor 1.96 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E 373 Single Pulse Avalanche Energy AS (Thermally limited) mJ E Single Pulse Avalanche Energy 775 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.51 JC Case-to-Sink, Flat Greased Surface R 0.50 CS C/W Junction-to-Ambient (TO-220) R 62 JA 2 Junction-to-Ambient (PCB Mount) (D -Pak) R 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 24 mV/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 2.0 2.4 V = 10V, I = 100A DS(on) GS D m 2.6 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 250A GS(th) DS GS D 1.0 V = 60 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 1.9 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 75H, R = 50 , I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 1135A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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