StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications D V 75V DSS BLDC motor drive applications Battery powered circuits R typ. 5.6m DS(on) Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies S I 85A D OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters D D Benefits S S D Improved gate, avalanche and dynamic dV/dt ruggedness G G Fully characterized capacitance and avalanche SOA D2Pak TO-262 Enhanced body diode dV/dt and dI/dt capability IRFS7762PbF IRFSL7762PbF Lead-free, RoHS compliant G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFSL7762PbF TO-262 Tube 50 IRFSL7762PbF Tube 50 IRFS7762PbF 2 IRFS7762PbF D -Pak Tape and Reel Left 800 IRFS7762TRLPbF 18 100 I = 51A D 16 80 14 T = 125C 60 J 12 10 40 8 T = 25C 20 J 6 4 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFS/SL7762PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 85 D C GS I T = 100C Continuous Drain Current, V 10V 60 A D C GS I Pulsed Drain Current 335 DM P T = 25C Maximum Power Dissipation 140 W D C Linear Derating Factor 0.95 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Symbol Max. Units Parameter E Single Pulse Avalanche Energy 160 AS (Thermally limited) mJ E 243 Single Pulse Avalanche Energy AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 1.05 JC C/W R Junction-to-Ambient (PCB Mount) 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 58 mV/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 5.6 6.7 V = 10V, I = 51A GS D DS(on) m 6.6 V = 6.0V, I = 26A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D 1.0 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 75V,V = 0V,T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.5 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 120H, R = 50 , I = 51A, V =10V. Jmax J G AS GS I 51A, di/dt 735A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . C oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 22A, V =10V. Jmax J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: