StrongIRFET IRFB7537PbF IRFS7537PbF IRFSL7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D V 60V BLDC Motor drive applications DSS Battery powered circuits R typ. 2.75m DS(on) Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and redundant power switches I 173A D DC/DC and AC/DC converters DC/AC Inverters D D Benefits S S S Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D D G G G Fully Characterized Capacitance and Avalanche SOA 2 TO-220AB Enhanced body diode dV/dt and dI/dt Capability D Pak TO-262 IRFB7537PbF Lead-Free, RoHS Compliant IRFS7537PbF IRFSL7537PbF G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFB7537PbF TO-220 Tube 50 IRFB7537PbF IRFSL7537PbF TO-262 Tube 50 IRFSL7537PbF Tube 50 IRFS7537PbF 2 IRFS7537PbF D -Pak Tape and Reel Left 800 IRFS7537TRLPbF 12 200 I = 100A D 10 150 8 6 T = 125C J 100 4 50 T = 25C 2 J 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 V Gate -to -Source Voltage (V) T , Case Temperature (C) GS, C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback October 7, 2014 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRFB/S/SL7537PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 173 D C GS I T = 100C Continuous Drain Current, V 10V 122 A D C GS I Pulsed Drain Current 700 DM P T = 25C Maximum Power Dissipation 230 W D C Linear Derating Factor 1.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 270 AS mJ E 554 Single Pulse Avalanche Energy AS (L=1mH) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R Case-to-Sink, Flat Greased Surface 0.50 CS C/W R Junction-to-Ambient (TO-220) 62 JA 2 R Junction-to-Ambient (PCB Mount) (D -Pak) 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 40 mV/C Reference to 25C, I = 1mA D (BR)DSS J 2.75 3.30 V = 10V, I = 100A GS D R Static Drain-to-Source On-Resistance m DS(on) 3.50 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 150A GS(th) DS GS D 1.0 V =60 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.0 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 54H, R = 50, I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 1130A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994.: