PD- 91287D IRFY140C IRFY140CM 100V, N-CHANNEL POWER MOSFET HEXFET MOSFET TECHNOLOGY THRU-HOLE (TO-257AA) Product Summary Part Number RDS(on) I Eyelets D IRFY140C 16A* Ceramic 0.077 IRFY140CM 0.077 16A* Ceramic TO-257AA Description Features HEXFET MOSFET technology is the key to IR Hirel advanced Simple Drive Requirements line of power MOSFET transistors. The efficient geometry design Hermetically Sealed achieves very low on-state resistance combined with high trans Electrically Isolated conductance. HEXFET transistors also feature all of the well- Ceramic Eyelets established advantages of MOSFETs, such as voltage control, Ideally Suited For Space Level Applications very fast switching and electrical parameter temperature ESD Rating: Class 2 per MIL-STD-750, stability. They are well-suited for applications such as switching Method 1020 power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistors totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Symbol Parameter Value Units I V = 10V, T = 25C Continuous Drain Current 16* D1 GS C A I V = 10V, T = 100C Continuous Drain Current 16* D2 GS C I T = 25C Pulsed Drain Current 64 DM C P T = 25C Maximum Power Dissipation 100 W D C Linear Derating Factor 0.8 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 230 mJ AS I Avalanche Current 16* A AR E Repetitive Avalanche Energy 10 mJ AR dv/dt Peak Diode Recovery 5.5 V/ns T Operating Junction and J -55 to + 150 T Storage Temperature Range C STG Lead Temperature 300(0.063in./1.6mm from case for 10 sec) Weight 4.3 (Typical) g *Current is limited by package For footnotes refer to the page 2. 1 2019-05-23 International Rectifier HiRel Products, Inc. IRFY140C IRFY140CM Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 1.0mA DSS GS D BV /T DSS J Breakdown Voltage Temp. Coefficient 0.1 V/C Reference to 25C, I = 1.0mA D R DS(on) Static Drain-to-Source On-Resistance 0.077 V = 10V, I = 16A GS D2 V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D Gfs Forward Transconductance 9.1 S V = 15V, I = 16A DS D2 I 25 V = 80V, V = 0V DSS DS GS Zero Gate Voltage Drain Current A 250 V = 80V,V = 0V,T =125C DS GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA Gate-to-Source Leakage Reverse -100 V = -20V GS Q Total Gate Charge 59 I = 16A G D1 Q Gate-to-Source Charge 12 nC V = 50V GS DS Q Gate-to-Drain (Miller) Charge 30.7 V = 10V GD GS t Turn-On Delay Time 21 V = 50V d(on) DD tr Rise Time 145 I = 16A D1 ns t Turn-Off Delay Time 64 R = 9.1 d(off) G t Fall Time 105 V = 10V f GS Measured from drain lead (6mm/0.25in. from package) to Ls +L Total Inductance 6.8 nH D source lead (6mm/0.25in. from package) C Input Capacitance 1660 V = 0V iss GS pF C Output Capacitance 550 V = 25V oss DS C Reverse Transfer Capacitance 120 = 1.0MHz rss Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions I Continuous Source Current (Body Diode) 16 S A I Pulsed Source Current (Body Diode) 100 SM V Diode Forward Voltage 1.5 V T = 25C,I = 16A, V = 0V SD J S GS t Reverse Recovery Time 400 ns T = 25C ,I = 16A,V 50V rr J F DD Q Reverse Recovery Charge 2.4 C di/dt = 100A/s rr Ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D Thermal Resistance Symbol Parameter Min. Typ. Max. Units R Junction-to-Case 1.25 JC Case-to-sink 0.21 C/W R CS Junction-to-Ambient (Typical Socket Mount) 80 R JA Footnotes: Repetitive Rating Pulse width limited by maximum junction temperature. V = 25V, starting T = 25C, L = 1.8mH, Peak I = 16A,V = 10V. DD J L GS I 16A, di/dt 170A/s, V 100V, T 150C. SD DD J Pulse width 300 s Duty Cycle 2% 2 2019-05-23 International Rectifier HiRel Products, Inc.