IRFZ24N Infineon


 

   

  
 D  
     


    G
#$ 
    S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance TO-220AB and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.     
    ' () *
!    +  , (, -    ' () *!    +  , (, 
#    ' .+  # &/  . () *
! . 0+1    2 + 3   ! ,    , 3 4
 ,  5  3.#6 75 38 - $  ' #6 7   #  5 16#6 75 38  $  6 .+  686  ,  ) 91 3      :-
)  3)$1 3 !     3)$1   ;&$$ $ < =   3 >&
 = 0 %? ;@?$<   
             
          !      #$%    &

 www.irf.com 1

      !#

         , +    A 0 , 3   , , *,' *
B#    
 A 0 , 3)$1     
 ,!   
!' *$#
     +    9     - , *,' *#    , )77 , 3
   , , *, ' *
B#     3  0)         , *
,' *#    
, * ,, *,   ' +    23  B#   
 , *,, *,) * !  
    023    , *
,  ' #     623    , *
,  C ) 73  
 ' *#   C    73     , *,   C  + ;D=D<73   -& , *,3&     ) 9 +8)$  E  , *
/,    )$    ' *#     ) 9+8)$  E   *
    )$ 
-   *
&, 3   D A0  2 '  + '        &$$;
 < G G  $1 3  2 '    '      -         S  ' 11    -  , *,    911      1 , *
,    6) 1    &  F*=GH3  $ %
   
         D '        =95)8$%     - ;A 8+ < 7 0 37 # G  .     36    &/ S ;A 8+ < 1 K    , +  0, 3    , ) *
!' *#, *, 
   6 68)$  & /  ) *
!' *# 
 C 6 6873  
 /  *#B   
16 3I107$%8  I #
/#B, ,  SD    $JK  $1;3< ) - !
  , *
, 3) *
!2*$G  .07 BI8 8  
L 
  *
' *#;3
<   2 www.irf.com