PD - 94952A
IRFZ46NPbF
HEXFET Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
D
V = 55V
DSS
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching R = 16.5m
DS(on)
G
Fully Avalanche Rated
Lead-Free
I = 53A
D
S
Description
Advanced HEXFET Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V 53
D C GS
I @ T = 100C Continuous Drain Current, V @ 10V 37 A
D C GS
I Pulsed Drain Current 180
DM
P @T = 25C Power Dissipation 107 W
D C
Linear Derating Factor 0.71 W/C
V Gate-to-Source Voltage 20 V
GS
I Avalanche Current 28 A
AR
E Repetitive Avalanche Energy 11 mJ
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range
C
STG
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 1.4
JC
R Case-to-Sink, Flat, Greased Surface 0.50 C/W
CS
R Junction-to-Ambient 62
JA
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09/30/10
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A
(BR)DSS GS D
V / T Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I = 1mA
(BR)DSS J D
R Static Drain-to-Source On-Resistance 16.5 m V = 10V, I = 28A
DS(on) GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 19 S V = 25V, I = 28A
fs DS D
25 V = 55V, V = 0V
DS GS
I Drain-to-Source Leakage Current
A
DSS
250 V = 44V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 100 V = 20V
GS
I nA
GSS
Gate-to-Source Reverse Leakage -100 V = -20V
GS
Q Total Gate Charge 72 I = 28A
g D
Q Gate-to-Source Charge 11 nC V = 44V
gs DS
Q Gate-to-Drain Mille) Charge 26 V = 10V, See Fig. 6 and 13
gd GS
t Turn-On Delay Time 14 V = 28V
d(on) DD
t Rise Time 76 I = 28A
r D
ns
t Turn-Off Delay Time 52 R = 12
d(off) G
t Fall Time 57 V = 10V, See Fig. 10
f GS
D
Between lead,
L Internal Drain Inductance 4.5
D
6mm (0.25in.)
nH
G
from package
L Internal Source Inductance 7.5
S
and center of die contact
S
C Input Capacitance 1696 V = 0V
iss GS
C Output Capacitance 407 V = 25V
oss DS
C Reverse Transfer Capacitance 110 pF = 1.0MHz, See Fig. 5
rss
E Single Pulse Avalanche Energy 583 152 mJ I = 28A, L = 389H
AS AS
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
53
(Body Diode) showing the
A
G
I Pulsed Source Current integral reverse
SM
180
(Body Diode) p-n junction diode. S
V Diode Forward Voltage 1.3 V T = 25C, I = 28A, V = 0V
SD J S GS
t Reverse Recovery Time 67 101 ns T = 25C, I = 28A
rr J F
Q Reverse Recovery Charge 208 312 nC di/dt = 100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
Repetitive rating; pulse width limited by Pulse width 400s; duty cycle 2%.
max. junction temperature. ( See fig. 11 ). This is a typical value at device destruction and represents
Starting T = 25C, L = 389H operation outside rated limits.
J
R = 25 , I = 28A. (See Figure 12). This is a calculated value limited to T = 175C.
G AS
J
I 28Adi/d220A/s, V V ,
Calculated continuous current based on maximum allowable
SD DD (BR)DSS
T 175C.
J
junction temperature. Package limitation current is 39A.
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