PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features IRFZ46ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D V = 55V 175C Operating Temperature DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 13.6m DS(on) G Lead-Free Description I = 51A D S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of 2 TO-220AB D Pak TO-262 applications. IRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C 51 A C Continuous Drain Current, V 10V (Silicon Limited) D GS I T = 100C 36 C Continuous Drain Current, V 10V (See Fig. 9) D GS I Pulsed Drain Current 200 DM P T = 25C C Maximum Power Dissipation 82 W D Linear Derating Factor 0.54 W/C V Gate-to-Source Voltage 20 V GS E AS 63 mJ Single Pulse Avalanche Energy (Thermally Limited) E (tested) AS 97 Single Pulse Avalanche Energy Tested Value I AR See Fig.12a,12b,15,16 A Avalanche Current E AR mJ Repetitive Avalanche Energy T -55 to + 175 C Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 1.84 C/W R CS Case-to-Sink, Flat, Greased Surface 0.50 R 62 JA Junction-to-Ambient R 40 JA Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage55 V V = 0V, I = 250A GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.053 V/C Reference to 25C, I = 1mA D R Static Drain-to-Source On-Resistance 10.9 13.6 V = 10V, I = 31A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 45 S V = 25V, I = 31A DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 3146nC I = 31A D Q Gate-to-Source Charge 7.6 11 V = 44V gs DS Q Gate-to-Drain Mille) Charge 12 18 V = 10V gd GS t d(on) Turn-On Delay Time 13 ns V = 28V DD t r Rise Time 63 I = 31A D t Turn-Off Delay Time 37 R = 15 d(off) G t Fall Time 39 V = 10V f GS L D Internal Drain Inductance 4.5 nH Between lead, D 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 1460 pF V = 0V iss GS C oss Output Capacitance 250 V = 25V DS C rss Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 5 C Output Capacitance 860 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 190 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. oss Effective Output Capacitance 310 V = 0V, V = 0V to 44V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 51 MOSFET symbol S (Body Diode) A showing the G I SM Pulsed Source Current 200 integral reverse S (Body Diode) p-n junction diode. V T = 25C, I = 31A, V = 0V Diode Forward Voltage 1.3 V SD J S GS t Reverse Recovery Time T = 25C, I = 31A, V = 28V rr 21 31 ns DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 16 24 nC t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on C eff. is a fixed capacitance that gives the same charging time oss Repetitive rating pulse width limited by as C while V is rising from 0 to 80% V . oss DS DSS max. junction temperature. (See fig. 11). Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax Limited by T , starting T = 25C, L =0.13mH, Jmax J avalanche performance. R = 25 , I = 31A, V =10V. Part not G AS GS This value determined from sample failure population. 100% recommended for use above this value. tested to this value in production. I 31A, di/dt 1070A/s, V V , SD DD (BR)DSS 2 This is applied to D Pak, when mounted on 1 square PCB T 175C. J ( FR-4 or G-10 Material ). For recommended footprint and Pulse width 1.0ms duty cycle 2%. soldering techniques refer to application note AN-994. 2 www.irf.com