PD - 95148 IRL1404SPbF IRL1404LPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature V = 40V DSS Fast Switching Fully Avalanche Rated R = 0.004 DS(on) Lead-Free G Description I = 160A D Seventh Generation HEXFET power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- 2 D Pak TO-262 resistance in any existing surface mount package. The 2 IRL1404S IRL1404L D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1404L) is available for low- Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 160 D C GS I T = 100C Continuous Drain Current, V 10V 110 A D C GS I Pulsed Drain Current 640 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 520 mJ AS I Avalanche Current 95 A AR E Repetitive Avalanche Energy 20 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient (PCB Mounted) 40 JA www.irf.com 1 04/19/04IRL1404S/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.038 V/C Reference to 25C, = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.004 V = 10V, I = 95A DS(on) GS D 0.0059 V = 4.3V, I = 40A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 93 S V = 25V, I = 95A fs DS D 20 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 250 V = 32V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 140 I = 95A g D Q Gate-to-Source Charge 48 nC V = 32V gs DS Q Gate-to-Drain Mille) Charge 60 V = 5.0V, See Fig. 6 gd GS t Turn-On Delay Time 18 V = 20V d(on) DD ns t Rise Time 270 I = 95A r D t Turn-Off Delay Time 38 R = 2.5 V = 4.5V d(off) G GS t Fall Time 130 R = 0.25 f D Between lead, D L Internal Drain Inductance 4.5 D nH 6mm (0.25in.) G from package 7.5 L Internal Source Inductance S and center of die contact S C Input Capacitance 6600 V = 0V iss GS C Output Capacitance 1700 pF V = 25V oss DS C Reverse Transfer Capacitance 350 = 1.0MHz, See Fig. 5 rss C Output Capacitance 6700 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 1500 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1500 V = 0V, V = 0V to 32V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 160 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 640 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 95A, V = 0V SD J S GS t Reverse Recovery Time 63 94 ns T = 25C, I = 95A rr J F Q Reverse RecoveryCharge 170 250 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com