PD - 94804B IRL1404Z AUTOMOTIVE MOSFET IRL1404ZS Features IRL1404ZL Logic Level HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature V = 40V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 3.1m DS(on) G I = 75A Description D S Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Automotive applications 2 TO-220AB D Pak TO-262 and a wide variety of other applications. IRL1404Z IRL1404ZS IRL1404ZL Absolute Maximum Ratings Parameter Max. Units I T = 25C 200 Continuous Drain Current, V 10V (Silicon Limited) D C GS I T = 100C Continuous Drain Current, V 10V 140 A D C GS I T = 25C (Package Limited) 75 D C Continuous Drain Current, V 10V GS I 790 DM Pulsed Drain Current P T = 25C 230 W Power Dissipation D C Linear Derating Factor 1.5 W/C V 16 V GS Gate-to-Source Voltage E Single Pulse Avalanche Energy AS (Thermally limited) 220 mJ E (Tested ) Single Pulse Avalanche Energy Tested Value AS 490 I See Fig.12a, 12b, 15, 16 A AR Avalanche Current E AR mJ Repetitive Avalanche Energy T -55 to + 175 J Operating Junction and T C Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.65 C/W JC R CS 0.50 Case-to-Sink, Flat, Greased Surface R 62 JA Junction-to-Ambient R JA Junction-to-Ambient (PCB Mount) 40 www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage40 V V = 0V, I = 250A (BR)DSS GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.034 V/C Reference to 25C, I = 1mA D 2.5 3.1 V = 10V, I = 75A GS D m R DS(on) Static Drain-to-Source On-Resistance 4.7 V = 5.0V, I = 40A GS D 5.9 V = 4.5V, I = 40A GS D V Gate Threshold Voltage 1.4 2.7 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 120 S V = 10V, I = 75A DS D I DSS Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 16V GS Gate-to-Source Reverse Leakage-200 V = -16V GS Q g Total Gate Charge75110 I = 75A D Q gs Gate-to-Source Charge28nC V = 32V DS Q Gate-to-Drain Mille) Charge40 V = 5.0V gd GS t d(on) Turn-On Delay Time 19 V = 20V DD t r Rise Time 180 I = 75A D t Turn-Off Delay Time 30 ns R = 4.0 d(off) G t f Fall Time 49 V = 5.0V GS L D D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 5080 V = 0V iss GS C oss Output Capacitance 970 V = 25V DS C Reverse Transfer Capacitance 570 pF = 1.0MHz rss C oss Output Capacitance 3310 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 870 V = 0V, V = 32V, = 1.0MHz GS DS eff. C Effective Output Capacitance 1280 V = 0V, V = 0V to 32V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 180 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 720 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage1.3V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 2639ns T = 25C, I = 75A, V = 20V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 18 27 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by Limited by T , see Fig.12a, 12b, 15, 16 for typical Jmax max. junction temperature. (See fig. 11). repetitive avalanche performance. Limited by T , starting T = 25C, Jmax J This value determined from sample failure population. 100% L = 0.079mH, R = 25, I = 75A, V =10V. G AS GS tested to this value in production. Part not recommended for use above this value. This is only applied to TO-220AB package. Pulse width 1.0ms duty cycle 2%. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques C eff. is a fixed capacitance that gives the same oss refer to application note AN-994. charging time as C while V is rising from 0 to oss DS 80% V . DSS 2 www.irf.com