PD - 9.1323B IRL3303S/L HEXFET Power MOSFET l Logic-Level Gate Drive l Advanced Process Technology D V = 30V DSS l Surface Mount (IRL3303S) l Low-profile through-hole (IRL3303L) l 175C Operating Temperature R = 0.026 DS(on) l Fast Switching G l Fully Avalanche Rated = 38A I D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pak TO-262 resistance in any existing surface mount package. The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL3303L) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 38 D C GS T = 100C Continuous Drain Current, V 10V 27 A I D C GS I Pulsed Drain Current 140 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 68 W D C Linear Derating Factor 0.45 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 130 mJ AS I Avalanche Current 20 A AR E Repetitive Avalanche Energy 6.8 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns Operating Junction and -55 to + 175 T J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.2 JC C/W R Junction-to-Ambient ( PCB Mounted,steady-state)** 40 JA 8/25/97IRL3303S/L Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.026 V = 10V, I = 20A GS D R Static Drain-to-Source On-Resistance DS(on) 0.040 V = 4.5V, I = 17A T = 150C GS D J V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 12 S V = 25V, I = 20A fs DS D 25 V = 30V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 250 V = 24V, V = 0V, T = 150C DS GS J = 16V Gate-to-Source Forward Leakage 100 V GS nA I GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Total Gate Charge 26 I = 20A Qg D Q Gate-to-Source Charge 8.8 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 15 V = 4.5V, See Fig. 6 and 13 gd GS Turn-On Delay Time 7.4 V = 15V t d(on) DD t Rise Time 200 I = 20A r D Turn-Off Delay Time 14 R = 6.5 td(off) G t Fall Time 36 R = 0.7, See Fig. 10 f D Between lead, L Internal Source Inductance 7.5 S nH and center of die contact C Input Capacitance 870 V = 0V iss GS Output Capacitance 340 pF V = 25V Coss DS C Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D Continuous Source Current MOSFET symbol IS 38 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 140 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 72 110 ns T = 25C, I = 20A rr J F Q Reverse Recovery Charge 180 280 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by I 20A, di/dt 140A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 175C J Pulse width 300s duty cycle 2%. V = 15V, starting T = 25C, L = 470H DD J R = 25, I = 20A. (See Figure 12) G AS Uses IRL3303 data and test conditions. ** When mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994.