IRL3705NPbF HEXFET Power MOSFET Logic - Level Gate Drive D V 55V Advanced Process Technology DSS Dynamic dv/dt Rating G R max. 0.01 DS(on) 175C Operating Temperature Fast Switching S I 89A D Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on- S D G resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device TO-220AB design that HEXFET Power MOSFETs are well IRL3705NPbF known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G D S The TO-220 package is universally preferred for all Gate Drain Source commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry. Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRL3705NPbF TO-220 Tube 50 IRL3705NPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 89 D C GS I T = 100C Continuous Drain Current, V 10V 63 A D C GS I Pulsed Drain Current 310 DM P T = 25C Maximum Power Dissipation 170 D C W Linear Derating Factor 1.1 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 340 mJ AS I Avalanche Current 46 A AR E Repetitive Avalanche Energy 17 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.90 R JC Case-to-Sink, Flat, Greased Surface 0.50 R C/W CS R Junction-to-Ambient 62 JA 1 2018-05-25 IRL3705NPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.056 V/C Reference to 25C, I = 1mA V /T (BR)DSS J D 0.010 V = 10V, I = 46A GS D Static Drain-to-Source On- R 0.012 V = 5.0V, I = 46A DS(on) GS D Resistance 0.018 V = 4.0V, I = 39A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 50 S V = 25V, I = 46A DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 98 I = 46A g D Q Gate-to-Source Charge 19 nC V = 44V gs DS Q Gate-to-Drain Charge 49 V = 5.0V , See Fig. 6 and 13 gd GS t Turn-On Delay Time 12 V = 28V d(on) DD t Rise Time 140 I = 46A r D ns t Turn-Off Delay Time 37 R = 1.8V = 5.0V d(off) G GS t Fall Time 78 R = 0.59 See Fig. 10 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 3600 V = 0V iss GS C Output Capacitance 870 pF V = 25V oss DS C Reverse Transfer Capacitance 320 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 89 S (Body Diode) showing the A Pulsed Source Current integral reverse I 310 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 46A,V = 0V SD J S GS t Reverse Recovery Time 94 140 ns T = 25C ,I = 46A rr J F Q Reverse Recovery Charge 290 440 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) V = 25V, starting T = 25C, L = 320H, R = 25, I = 46A.(See fig.12) DD J G AS I 46A, di/dt 250A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature for recommended current- handling of the package refer to Design TIP 93-4 . 2 2018-05-25