PD - 95579A IRL3705ZPbF IRL3705ZSPbF Features IRL3705ZLPbF Logic Level HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 55V DSS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 8.0m DS(on) G Lead-Free Description I = 75A D S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of 2 TO-220AB D Pak TO-262 applications. IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Absolute Maximum Ratings Parameter Max. Units (Silicon Limited) I T = 25C Continuous Drain Current, V 10V GS 86 D C Continuous Drain Current, V 10V I T = 100C 61 A GS D C I T = 25C Continuous Drain Current, V 10V (Package Limited) GS 75 D C I Pulsed Drain Current 340 DM P T = 25C Power Dissipation 130 W D C Linear Derating Factor 0.88 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy AS (Thermally limited) 120 mJ E (Tested ) Single Pulse Avalanche Energy Tested Value AS 180 I Avalanche Current A AR See Fig.12a, 12b, 15, 16 E AR Repetitive Avalanche Energy mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case JC 1.14 C/W R Case-to-Sink, Flat Greased Surface CS 0.50 R JA Junction-to-Ambient 62 R Junction-to-Ambient (PCB Mount) JA 40 www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions 55 V V = 0V, I = 250A V Drain-to-Source Breakdown Voltage (BR)DSS GS D 0.055 V/C Reference to 25C, I = 1mA V / T Breakdown Voltage Temp. Coefficient D (BR)DSS J 6.5 8.0 V = 10V, I = 52A GS D m 11 V = 5.0V, I = 43A R DS(on) Static Drain-to-Source On-Resistance GS D 12 V = 4.5V, I = 30A GS D 1.0 3.0 V V = V , I = 250A V Gate Threshold Voltage DS GS D GS(th) 150 V V = 25V, I = 52A gfs Forward Transconductance DS D 20 A V = 55V, V = 0V I DSS Drain-to-Source Leakage Current DS GS 250 V = 55V, V = 0V, T = 125C DS GS J 200 nA V = 16V I Gate-to-Source Forward Leakage GS GSS -200 V = -16V Gate-to-Source Reverse Leakage GS = 43A Q 40 60 I g Total Gate Charge D 12 nC V = 44V Q Gate-to-Source Charge gs DS 21 V = 5.0V Q Gate-to-Drain Mille) Charge GS gd 17 V = 28V t Turn-On Delay Time DD d(on) t 240 ns I = 43A r Rise Time D 26 R = 4.3 t Turn-Off Delay Time d(off) G 83 V = 5.0V t Fall Time GS f D L Internal Drain Inductance D 4.5 Between lead, nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact 2880 V = 0V C Input Capacitance GS iss C 420 V = 25V Output Capacitance DS oss C rss Reverse Transfer Capacitance 220 pF = 1.0MHz 1500 V = 0V, V = 1.0V, = 1.0MHz C Output Capacitance oss GS DS 330 V = 0V, V = 44V, = 1.0MHz C Output Capacitance GS DS oss C eff. 510 V = 0V, V = 0V to 44V Effective Output Capacitance GS DS oss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current 75 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 340 integral reverse G SM S (Body Diode) p-n junction diode. V Diode Forward Voltage1.3V T = 25C, I = 52A, V = 0V SD J S GS t Reverse Recovery Time 1624ns T = 25C, I = 43A, V = 28V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge7.411nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com