PD- 91888 IRL5602S HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating V = -20V DSS l 175C Operating Temperature l P-Channel R = 0.042W DS(on) l Fast Switching G l Fully Avalanche Rated I = -24A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest 2 D Pak 2 possible on-resistance in any existing surface mount package. The D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V -4.5V -24 D C GS I T = 100C Continuous Drain Current, V -4.5V -17 A D C GS I Pulsed Drain Current -96 DM P T = 25C Power Dissipation 75 W D C Linear Derating Factor 0.5 W/C V Gate-to-Source Voltage 8.0 V GS E Single Pulse Avalanche Energy 290 mJ AS I Avalanche Current -12 A AR E Repetitive Avalanche Energy 7.5 mJ AR dv/dt Peak Diode Recovery dv/dt -0.81 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.0 qJC C/W R Junction-to-Ambient ( PCB Mounted,steady-state)** 40 qJA www.irf.com 1 5/11/99IRL5602S Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A (BR)DSS GS D DV /DT Breakdown Voltage Temp. Coefficient -0.013 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.042 V = -4.5V, I = -12A GS D R Static Drain-to-Source On-Resistance DS(on) 0.062 W V = -2.7V, I = -10A GS D 0.075 V = -2.5V, I = -10A GS D V Gate Threshold Voltage -0.7 -1.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 12 S V = -15V, I = -12A fs DS D -25 V = -20V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS -250 V = -16V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 500 V = -8.0V GS I nA GSS Gate-to-Source Reverse Leakage -500 V = 8.0V GS Q Total Gate Charge 44 I = -12A g D Q Gate-to-Source Charge 8.7 nC V = -16V gs DS Q Gate-to-Drain Mille) Charge 19 V = -4.5V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 9.7 V = -10 V d(on) DD t Rise Time 73 I = -12A r D ns t Turn-Off Delay Time 53 R = 6.0W, V = 4.5V d(off) G GS t Fall Time 84 R = 0.8W, See Fig. 10 f D Between lead, L Internal Source Inductance 7.5 S nH and center of die contact C Input Capacitance 1460 V = 0V iss GS C Output Capacitance 790 pF V = -15V oss DS C Reverse Transfer Capacitance 370 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -24 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -96 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.4 V T = 25C, I = -12A, V = 0V SD J S GS t Reverse Recovery Time 58 88 ns T = 25C, I = -12A rr J F Q Reverse RecoveryCharge 54 81 nC di/dt = -100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by I -12A, di/dt 120A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 175C J Starting T = 25C, L = 3.0mH Pulse width 300s duty cycle 2%. J R = 25W, I = -14A. (See Figure 12) G AS ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com