StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications Typical values (unless otherwise specified) ORing, eFuse, and high current load switch V V V R R R DSS GS gs(th) DS(on) DS(on) DS(on) Load switch for battery 20V max 12V max 0.8V 0.50m 10V 0.65m 4.5V 1.1m 2.5V application Inverter switches for DC motor application S S S DD Features and Benefits G S Environmentally Friendly Product RoHs compliant containing no Lead, no Bromide DirectFET ISOMETRIC MD and no Halogen Very Low R DS(on) ApplicaApplicabble Dile DirectFET OrectFET Ouutline and Subtline and Subssttrrate Outline ate Outline (see p.7,8 fo(see p.7,8 for details) r details) SQ SX ST MQ MD MT MP MC Description The IRL6283MTRPbF combines the latest HEXFET N-Channel Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The Direct- FET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRL6283MTRPbF DirectFET Medium Can Tape and Reel 4800 IRL6283MTRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 12 V GS I T = 25C Continuous Drain Current, V 4.5V 38 D A GS I T = 70C Continuous Drain Current, V 4.5V 30 A D A GS I T = 25C Continuous Drain Current, V 4.5V 211 D C GS I Pulsed Drain Current 305 DM E Single Pulse Avalanche Energy 406 mJ AS I Avalanche Current 30 A AR 2.0 14.0 I = 30A I = 38A D 1.8 D 12.0 V = 16V 1.6 DS 10.0 V = 10V DS 1.4 8.0 VDS= 4.0V 1.2 6.0 1.0 T = 125C J 4.0 0.8 T = 25C J 2.0 0.6 0.4 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 50 100 150 200 250 300 V Gate -to -Source Voltage (V) Q Total Gate Charge (nC) GS, G Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. Starting T = 25C, L = 0.88mH, R = 50, I = 30A. J G AS 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback September 24, 2014 Typical R (m) DS(on) V , Gate-to-Source Voltage (V) GS IRL6283MTRPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D BV /T Breakdown Voltage Temp. Coefficient 4.8 mV/C Reference to 25C, I = 1.0mA D DSS J 0.50 0.75 V = 10V, I = 50A GS D R Static Drain-to-Source On-Resistance 0.65 0.87 V = 4.5V, I = 50A m DS(on) GS D 1.1 1.5 V = 2.5V, I = 50A GS D V Gate Threshold Voltage 0.5 0.8 1.1 V V = V , I = 100A GS(th) DS GS D V Gate Threshold Voltage Coefficient -3.9 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DSS DS GS 150 V = 16V, V = 0V, T =125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 12V GSS GS Gate-to-Source Reverse Leakage -100 V = -12V GS gfs Forward Transconductance 320 S V = 10V, I = 30A DS D Q Total Gate Charge 105 158 g Q Pre-VthGate-to-Source Charge 9.7 V = 10V gs1 DS Q Post-Vth Gate-to-Source Charge 8.9 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 35 I = 30A gd D Q Gate Charge Overdrive 51 odr Q Switch Charge (Q + Q) 44 sw gs2 gd Q Output Charge 50 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.1 G t Turn-On Delay Time 23 V = 20V, V = 4.5V d(on) DD GS t Rise Time 160 ns I = 30A D r t Turn-Off Delay Time 116 d(off) R = 1.8 G t Fall Time 192 f C Input Capacitance 8292 V = 0V iss GS C Output Capacitance 2012 pF V = 10V oss DS C Reverse Transfer Capacitance 1526 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 211 A MOSFET symbol S (Body Diode) showing the G integral reverse I Pulsed Source Current 305 SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 30A, V = 0V SD J S GS t Reverse Recovery Time 48 72 ns T = 25C, I = 30A,V = 10V rr J F DD Q Reverse Recovery Charge 84 126 nC di/dt = 200A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback September 24, 2014