IRL6342PbF HEXFET Power MOSFET V 30 V DS V 12 V GS R DS(on) max 14.6 m ( V = 4.5V) GS Q 11 nC g (typical) SO-8 I D 9.9 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRL6342PBF SO-8 Tube/Bulk 95 IRL6342TRPBF SO-8 Tape and Reel 4000 Absolute Maximum Ratings Max. Parameter Units V 30 Drain-to-Source Voltage DS V 12 V Gate-to-Source Voltage GS Continuous Drain Current, V 4.5V 9.9 I T = 25C A GS D I T = 70C Continuous Drain Current, V 4.5V 7.9 A GS A D I Pulsed Drain Current 79 DM 2.5 P T = 25C Power Dissipation A D W Power Dissipation 1.6 P T = 70C D A Linear Derating Factor 0.02 W/C -55 to + 150 T Operating Junction and J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 01/03/11 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 30 V DSS GS D Reference to 25C, I = 1mA V / T Breakdown Voltage Temp. Coefficient 22 mV/C D DSS J R V = 4.5V, I = 9.9A DS(on) 12.0 14.6 GS D Static Drain-to-Source On-Resistance m V = 2.5V, I = 7.9A 15.0 19.0 GS D V Gate Threshold Voltage 0.5 1.1 V V = V , I = 10A GS(th) DS GS D V Gate Threshold Voltage Coefficient -4.2 mV/C GS(th) I V = 24V, V = 0V Drain-to-Source Leakage Current 1.0 DS GS DSS A V = 24V, V = 0V, T = 125C 150 DS GS J V = 12V I Gate-to-Source Forward Leakage 100 GSS GS nA V = -12V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 7.9A gfs Forward Transconductance 38 S DS D Q Total Gate Charge 11 g Q Pre-Vth Gate-to-Source Charge 0.01 V = 4.5V gs1 GS Q Post-Vth Gate-to-Source Charge 0.60 V = 15V gs2 DS nC Q Gate-to-Drain Charge 4.6 I = 7.9A gd D Q Gate Charge Overdrive 5.79 godr Q Switch Charge (Q + Q ) 5.2 sw gs2 gd R Gate Resistance 2.0 G V = 15V, V = 4.5V t Turn-On Delay Time 6.0 d(on) DD GS I = 7.9A t Rise Time 12 r D ns t Turn-Off Delay Time 33 R = 6.8 d(off) G t See Figs. 18 f Fall Time 14 C V = 0V iss Input Capacitance 1025 GS C pF V = 25V oss Output Capacitance 97 DS C = 1.0MHz Reverse Transfer Capacitance 70 rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units D I MOSFET symbol Continuous Source Current S 2.5 showing the (Body Diode) A G I integral reverse Pulsed Source Current SM 79 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 9.9A, V = 0V SD J S GS t T = 25C, I = 7.9A, V = 24V Reverse Recovery Time 13 20 ns rr J F DD Q Reverse Recovery Charge 5.2 7.8 nC di/dt = 100/s rr Thermal Resistance Typ. Max. Parameter Units R 20 Junction-to-Drain Lead JL C/W 50 R Junction-to-Ambient JA Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. When mounted on 1 ich square copper board. R is measured at T of approximately 90C. J 2 www.irf.com