X-On Electronics has gained recognition as a prominent supplier of IRL6372PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRL6372PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRL6372PBF Infineon

IRL6372PBF electronic component of Infineon
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Part No.IRL6372PBF
Manufacturer: Infineon
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 30V 8.1A 2W Surface Mount 8-SO
Datasheet: IRL6372PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
95: USD 0.4762 ea
Line Total: USD 45.24 
Availability - 0
MOQ: 95  Multiples: 95
Pack Size: 95
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0391
10 : USD 0.8808
100 : USD 0.675
500 : USD 0.5336
1000 : USD 0.4269

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 95
Multiples : 95
95 : USD 0.4762
570 : USD 0.4311
1805 : USD 0.399

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 190
Multiples : 95
190 : USD 0.4519

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRL6372PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRL6372PBF and other electronic components in the MOSFETs category and beyond.

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%&& IRL6372PbF HEXFET Power MOSFET V 30 V DS V 12 V GS R DS(on) max 17.9 m ( V = 4.5V) GS Q 11 nC g (typical) SO-8 I D 8.1 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRL6372PBF SO-8 Tube/Bulk 95 IRL6372TRPBF SO-8 Tape and Reel 4000 Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 30 DS V 12 V Gate-to-Source Voltage GS Continuous Drain Current, V 4.5V 8.1 I T = 25C GS D A I T = 70C Continuous Drain Current, V 4.5V 6.5 A GS D A I Pulsed Drain Current 65 DM 2.0 P T = 25C Power Dissipation A D W 1.3 P T = 70C Power Dissipation A D 0.02 Linear Derating Factor W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 01/17/2011 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 30 V GS D DSS Reference to 25C, I = 1mA V / T Breakdown Voltage Temp. Coefficient 23 mV/C D DSS J V = 4.5V, I = 8.1A R 14.0 17.9 GS D DS(on) Static Drain-to-Source On-Resistance m V = 2.5V, I = 6.5A 17.0 23.0 GS D V V = V , I = 10A GS(th) Gate Threshold Voltage 0.5 1.1 V DS GS D V Gate Threshold Voltage Coefficient -4.0 mV/C GS(th) V = 24V, V = 0V I Drain-to-Source Leakage Current 1.0 DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA V = -12V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 6.5A gfs Forward Transconductance 30 S DS D Q Total Gate Charge 11 g Q Pre-Vth Gate-to-Source Charge 0.01 V = 4.5V gs1 GS Q V = 15V Post-Vth Gate-to-Source Charge 0.50 DS gs2 nC Q I = 6.5A Gate-to-Drain Charge 4.8 D gd Q Gate Charge Overdrive 5.69 godr Q Switch Charge (Q + Q ) 5.3 sw gs2 gd R Gate Resistance 2.2 G t V = 15V, V = 4.5V d(on) Turn-On Delay Time 5.9 DD GS t I = 6.5A r Rise Time 13 D ns t R = 6.8 Turn-Off Delay Time 34 G d(off) t See Figs. 18 Fall Time 15 f C V = 0V Input Capacitance 1020 GS iss V = 25V C Output Capacitance 98 pF DS oss C Reverse Transfer Capacitance 68 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.0 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 65 p-n junction diode. S (Body Diode) V T = 25C, I = 6.5A, V = 0V SD Diode Forward Voltage 1.2 V J S GS t Reverse Recovery Time 13 20 ns T = 25C, I = 6.5A, V = 24V rr DD J F Q di/dt = 100/s rr Reverse Recovery Charge 5.3 8.0 nC Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 62.5 JA Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. When mounted on 1 ich square copper board. R is measured at T of approximately 90C. J 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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