StrongIRFET IRL7472L1TRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications V 40V DSS BLDC Motor drive applications Battery powered circuits R typ. 0.34m DS(on) Half-bridge and full-bridge topologies max Synchronous rectifier applications 0.45m Resonant mode power supplies V = 10V GS OR-ing and redundant power switches R typ. 0.52m DS(on) DC/DC and AC/DC converters DC/AC Inverters max 0.70m V = 4.5V GS I 375A D (Package Limited) Benefits Optimized for Logic Level Drive Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant S S S S D D S S G S S DirectFET ISOMETRIC L8 Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRL7472L1PbF Direct FET Large Can (L8) Tape and Reel 4000 IRL7472L1TRPbF 1.6 700 I = 195A D 1.4 Limited by package 600 1.2 500 1.0 400 0.8 T = 125C J 300 0.6 200 0.4 100 0.2 T = 25C J 0.0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 2016-10-14 D R , rain-to -Source On Resistance (m) S( ) D on I , Drain Current (A) D IRL7472L1TRPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C D C Continuous Drain Current, V 10V (Silicon Limited) 645 GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 456 D C GS A I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 68 D A GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 375 D C GS I Pulsed Drain Current 1500 A DM P T = 25C D C Maximum Power Dissipation 341 W P T = 25C D A Maximum Power Dissipation 3.8 Linear Derating Factor 0.025 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 175 J C Storage Temperature Range T STG Avalanche Characteristics E 308 AS (Thermally limited) Single Pulse Avalanche Energy mJ E 765 AS (Thermally limited) Single Pulse Avalanche Energy I AR Avalanche Current A See Fig.15,16, 23a, 23b E mJ AR Repetitive Avalanche Energy Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient R 40 JA Junction-to-Ambient R 12.5 JA Junction-to-Ambient R 20 C/W JA Junction-to-Case 0.44 R JC Junction-to-PCB Mounted R 1.0 JA-PCB Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 30 mV/C Reference to 25C, I = 5.0mA V / T D (BR)DSS J R Static Drain-to-Source On-Resistance 0.34 0.45 V = 10V, I = 195A DS(on) GS D m 0.52 0.70 V = 4.5V, I = 98A GS D V Gate Threshold Voltage 1.0 1.7 2.5 V V = V , I = 250A GS(th) DS GS D 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 1.0 G Notes: Mounted on minimum footprint full size board with metalized TC measured with thermocouple mounted to top (Drain) of part. back and with small clip heatsink. Used double sided cooling , mounting pad with large heatsink. Mounted to a PCB with small clip Mounted on minimum footprint full size Surface mounted on 1 in. square Cu heatsink (still air) board with metalized back and with board (still air). small clip heatsink (still air) 2 2016-10-14