IRL7833PbF IRL7833SPbF IRL7833LPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck V R max Qg DSS DS(on) Converters for Computer Processor Power High Frequency Isolated DC-DC 30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Use Lead-Free Benefits Very Low RDS(on) at 4.5V V GS 2 Ultra-Low Gate Impedance TO-220AB D Pak TO-262 IRL7833 IRL7833S IRL7833L Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS T = 25C Continuous Drain Current, V 10V 150 I GS D C I T = 100C Continuous Drain Current, V 10V 110 GS A D C Pulsed Drain Current I 600 DM Maximum Power Dissipation P T = 25C 140 W C D Maximum Power Dissipation P T = 100C 72 D C Linear Derating Factor 0.96 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 1.04 Case-to-Sink, Flat, Greased Surface R CS 0.50 C/W R 62 JA Junction-to-Ambient Junction-to-Ambient (PCB Mount) R 40 JA Notes through are on page 12 www.irf.com 1 05/18/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 18 mV/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 3.1 3.8 V = 10V, I = 38A GS D 3.7 4.5 V = 4.5V, I = 30A GS D V GS(th) Gate Threshold Voltage 1.4 2.3 V V = V , I = 250A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -11 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 150 S V = 15V, I = 30A DS D Q g Total Gate Charge 32 47 Q gs1 Pre-Vth Gate-to-Source Charge 8.7 V = 16V DS Q gs2 Post-Vth Gate-to-Source Charge 5.1 nC V = 4.5V GS Q gd Gate-to-Drain Charge 13 I = 30A D Q Gate Charge Overdrive 5.3 See Fig. 16 godr Q Switch Charge (Q + Q ) 18 sw gs2 gd Q oss Output Charge 22 nC V = 16V, V = 0V DS GS t d(on) Turn-On Delay Time 18 V = 15V, V = 4.5V DD GS t r Rise Time 50 ns I = 26A D t d(off) Turn-Off Delay Time 21 Clamped Inductive Load t Fall Time 6.9 f C Input Capacitance 4170 V = 0V iss GS C Output Capacitance 950 pF V = 15V oss DS C rss Reverse Transfer Capacitance 470 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 560 mJ AS Avalanche Current I 30 A AR Repetitive Avalanche Energy E AR 14 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current 150 MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 600 integral reverse SM S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.2 V T = 25C, I = 30A, V = 0V J S GS t rr Reverse Recovery Time 42 63 ns T = 25C, I = 30A, V = 15V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 34 51 nC 2 www.irf.com