IRL8113PbF IRL8113SPbF IRL8113LPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Processor Power V R max Qg (Typ.) DSS DS(on) Lead-Free 30V 6.0m 23nC Benefits Low R at 4.5V V DS(on) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 2 TO-220AB D Pak TO-262 IRL8113 IRL8113S IRL8113L Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 105 I T = 25C A C GS D Continuous Drain Current, V 10V 74 I T = 100C C GS D Pulsed Drain Current I 420 DM P T = 25C Maximum Power Dissipation 110 W D C P T = 100C Maximum Power Dissipation 57 D C Linear Derating Factor 0.76 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R 1.32 C/W JC Junction-to-Case R CS Case-to-Sink, Flat Greased Surface 0.50 R JA Junction-to-Ambient 62 R JA Junction-to-Ambient (PCB Mount) 40 Notes through are on page 12 www.irf.com 1 07/20/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.020 V/C Reference to 25C, I = 1mA D R m Static Drain-to-Source On-Resistance 4.8 6.0 V = 10V, I = 21A DS(on) GS D 5.7 7.1 V = 4.5V, I = 17A GS D V GS(th) Gate Threshold Voltage 1.35 2.25 V V = V , I = 250A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -5.0 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 86 S V = 15V, I = 17A DS D Q g Total Gate Charge 23 35 Q gs1 Pre-Vth Gate-to-Source Charge 6.0 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 2.0 nC V = 4.5V GS Q Gate-to-Drain Charge 8.3 I = 17A gd D Q Gate Charge Overdrive 6.7 See Fig. 16 godr Q Switch Charge (Q + Q ) sw gs2 gd 10 Q oss Output Charge 14 nC V = 16V, V = 0V DS GS t d(on) Turn-On Delay Time 14 V = 15V, V = 4.5V DD GS t r Rise Time 38 I = 17A D t Turn-Off Delay Time 18 ns Clamped Inductive Load d(off) t Fall Time 5.0 f C Input Capacitance 2840 V = 0V iss GS C oss Output Capacitance 620 pF V = 15V DS C rss Reverse Transfer Capacitance 290 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 220 mJ AS Avalanche Current I AR 17 A Repetitive Avalanche Energy E AR 11 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 105 I D Continuous Source Current MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 420 integral reverse SM S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 17A, V = 0V J S GS t rr Reverse Recovery Time 18 27 ns T = 25C, I = 17A, V = 15V J F DD Q di/dt = 100A/s Reverse Recovery Charge 7.2 11 nC rr 2 www.irf.com