X-On Electronics has gained recognition as a prominent supplier of IRL8113SPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRL8113SPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRL8113SPBF Infineon

IRL8113SPBF electronic component of Infineon
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Part No.IRL8113SPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFT 30V 105A 6mOhm 23nC Qg log lvl
Datasheet: IRL8113SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 1.2999 ea
Line Total: USD 13 
Availability - 0
MOQ: 10  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 50
10 : USD 1.2999
100 : USD 1.2033
500 : USD 1.0682

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRL8113SPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRL8113SPBF and other electronic components in the MOSFETs category and beyond.

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IRL8113PbF IRL8113SPbF IRL8113LPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Processor Power V R max Qg (Typ.) DSS DS(on) Lead-Free 30V 6.0m 23nC Benefits Low R at 4.5V V DS(on) GS Low Gate Charge Fully Characterized Avalanche Voltage and Current 2 TO-220AB D Pak TO-262 IRL8113 IRL8113S IRL8113L Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 105 I T = 25C A C GS D Continuous Drain Current, V 10V 74 I T = 100C C GS D Pulsed Drain Current I 420 DM P T = 25C Maximum Power Dissipation 110 W D C P T = 100C Maximum Power Dissipation 57 D C Linear Derating Factor 0.76 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R 1.32 C/W JC Junction-to-Case R CS Case-to-Sink, Flat Greased Surface 0.50 R JA Junction-to-Ambient 62 R JA Junction-to-Ambient (PCB Mount) 40 Notes through are on page 12 www.irf.com 1 07/20/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.020 V/C Reference to 25C, I = 1mA D R m Static Drain-to-Source On-Resistance 4.8 6.0 V = 10V, I = 21A DS(on) GS D 5.7 7.1 V = 4.5V, I = 17A GS D V GS(th) Gate Threshold Voltage 1.35 2.25 V V = V , I = 250A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -5.0 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 86 S V = 15V, I = 17A DS D Q g Total Gate Charge 23 35 Q gs1 Pre-Vth Gate-to-Source Charge 6.0 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 2.0 nC V = 4.5V GS Q Gate-to-Drain Charge 8.3 I = 17A gd D Q Gate Charge Overdrive 6.7 See Fig. 16 godr Q Switch Charge (Q + Q ) sw gs2 gd 10 Q oss Output Charge 14 nC V = 16V, V = 0V DS GS t d(on) Turn-On Delay Time 14 V = 15V, V = 4.5V DD GS t r Rise Time 38 I = 17A D t Turn-Off Delay Time 18 ns Clamped Inductive Load d(off) t Fall Time 5.0 f C Input Capacitance 2840 V = 0V iss GS C oss Output Capacitance 620 pF V = 15V DS C rss Reverse Transfer Capacitance 290 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 220 mJ AS Avalanche Current I AR 17 A Repetitive Avalanche Energy E AR 11 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 105 I D Continuous Source Current MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 420 integral reverse SM S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 17A, V = 0V J S GS t rr Reverse Recovery Time 18 27 ns T = 25C, I = 17A, V = 15V J F DD Q di/dt = 100A/s Reverse Recovery Charge 7.2 11 nC rr 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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