97407 IRLB3813PbF Applications HEXFET Power MOSFET Optimized for UPS/Inverter Applications V R max Qg (typ.) DSS DS(on) High Frequency Isolated DC-DC 1.95m V = 10V 30V 57nC GS Converters with Synchronous Rectification for Telecom and Industrial Use Power Tools D Benefits S D Very Low R at 4.5V V DS(on) GS G Ultra-Low Gate Impedance TO-220AB Fully Characterized Avalanche Voltage and Current Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units V 30 DS Drain-to-Source Voltage V 20 V Gate-to-Source Voltage GS I T = 25C Continuous Drain Current, V 10V 260 GS D C Continuous Drain Current, V 10V 190 A I T = 100C C GS D I Pulsed Drain Current 1050 DM Maximum Power Dissipation 230 P T = 25C D C W 120 P T = 100C Maximum Power Dissipation C D Linear Derating Factor 1.6 W/C -55 to + 175 T Operating Junction and J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R JC 0.64 Junction-to-Case R 0.50 CS Case-to-Sink, Flat Greased Surface C/W R JA 62 Junction-to-Ambient Notes through are on page 9 www.irf.com 1 07/03/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V / T DSS J Breakdown Voltage Temp. Coefficient 11 mV/C Reference to 25C, I = 1.0mA D m R DS(on) Static Drain-to-Source On-Resistance 1.60 1.95 V = 10V, I = 60A GS D 2.00 2.60 V = 4.5V, I = 48A GS D V Gate Threshold Voltage 1.35 1.90 2.35 V V = V , I = 150A GS(th) DS GS D V / T Gate Threshold Voltage Coefficient -7.8 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 100 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 140 S V = 15V, I = 48A DS D Q g Total Gate Charge 57 86 Q gs1 Pre-Vth Gate-to-Source Charge 16 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 6.7 nC V = 4.5V GS Q Gate-to-Drain Charge 19 I = 48A gd D Q Gate Charge Overdrive 15 See Fig. 16 godr Q Switch Charge (Q + Q ) sw gs2 gd 25.7 Q oss Output Charge 35 nC V = 16V, V = 0V DS GS R G Gate Resistance 0.87 1.3 t d(on) Turn-On Delay Time 36 V = 15V, V = 4.5V DD GS t r Rise Time 170 ns I = 48A D t d(off) Turn-Off Delay Time 33 R = 1.8 G t Fall Time 60 f See Fig. 14 C Input Capacitance 8420 V = 0V iss GS C Output Capacitance 1620 pF V = 15V oss DS C rss Reverse Transfer Capacitance 650 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 520 mJ Avalanche Current I AR 48 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S 260 (Body Diode) A showing the I SM Pulsed Source Current 1050 integral reverse (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 48A, V = 0V J S GS t rr Reverse Recovery Time 24 36 ns T = 25C, I = 48A, V = 15V DD J F Q di/dt = 244A/s rr Reverse Recovery Charge 22 33 nC 2 www.irf.com