X-On Electronics has gained recognition as a prominent supplier of IRLB8314PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLB8314PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLB8314PBF Infineon

IRLB8314PBF electronic component of Infineon
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See Product Specifications
Part No.IRLB8314PBF
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 171A 3-Pin(3+Tab) TO-220AB Tube
Datasheet: IRLB8314PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4656 ea
Line Total: USD 0.47 
Availability - 48
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4656
10 : USD 0.4115
50 : USD 0.3834
100 : USD 0.3572
500 : USD 0.3412
1000 : USD 0.3313

626
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3513
10 : USD 0.6919
100 : USD 0.6306
500 : USD 0.5186
1000 : USD 0.4816
2000 : USD 0.4539
5000 : USD 0.4413
10000 : USD 0.4331

2893
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 19
Multiples : 1
19 : USD 0.6943
100 : USD 0.6468
500 : USD 0.5418
1000 : USD 0.4905
2000 : USD 0.4854
5000 : USD 0.4735

1802
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 33
Multiples : 1
33 : USD 1.3088
50 : USD 0.9896
100 : USD 0.8872
200 : USD 0.8838
500 : USD 0.6962
1000 : USD 0.6365

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRLB8314PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLB8314PBF and other electronic components in the MOSFETs category and beyond.

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IRLB8314PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications V 30 V DSS D Low Voltage Power Tools R max DS(on) 2.4 ( V = 10V) GS m G ( V = 4.5V) 3.2 GS Qg 40 nC S (typical) Benefits I 171 D (Silicon Limited) Best in Class Performance for UPS/Inverter Applications A I 130A Very Low RDS(on) at 4.5V VGS D (Package Limited) Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current Lead-Free, RoHS Compliant S D G TO-220AB G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRLB8314PbF TO-220AB Tube 50 IRLB8314PbF Absolute Maximium Rating Symbol Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 171 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 120 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 130 D C GS I Pulsed Drain Current 664 DM P T = 25C Maximum Power Dissipation 125 W D C P T = 100C Maximum Power Dissipation 63 W D C Linear Derating Factor 0.83 W/C T Operating Junction and J -55 to + 175 C T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.2 JC R Case-to-Sink, Flat Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA Notes through are on page 8 1 2016-08-04 IRLB8314PbF Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D BV / T Breakdown Voltage Temp. Coefficient 14 mV/C Reference to 25C, I = 1mA D DSS J 1.9 2.4 V = 10V, I = 68A GS D R Static Drain-to-Source On-Resistance m DS(on) 2.6 3.2 V = 4.5V, I = 68A GS D V Gate Threshold Voltage 1.2 1.7 2.2 V GS(th) V = V , I = 100A DS GS D V / T Gate Threshold Voltage Coefficient -7.0 mV/C GS(th) J 1.0 V =24 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =24V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 307 S V = 15V, I =68A DS D Q Total Gate Charge 40 60 g Q Pre-Vth Gate-to-Source Charge 6.8 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 13 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 8.7 I = 68A gd D Q Gate Charge Overdrive 11.5 godr Q Switch Charge (Qgs2 + Qgd) 21.7 sw R Gate Resistance 1.7 G t Turn-On Delay Time 19 V = 15V d(on) DD t Rise Time 142 ns I = 68A r D t Turn-Off Delay Time 32 R = 1.8 d(off) G t Fall Time 72 V = 4.5V f GS C Input Capacitance 5050 V = 0V iss GS C Output Capacitance 890 pF V = 15V oss DS C Reverse Transfer Capacitance 500 = 1.0MHz rss Avalanche Characteristics E Single Pulse Avalanche Energy 180 AS (Thermally limited) mJ E Single Pulse Avalanche Energy Tested Value 900 AS (tested) I Avalanche Current 68 A AR E Repetitive Avalanche Energy mJ 12.5 AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 171 S (Body Diode) showing the A Pulsed Source Current integral reverse I 664 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C,I = 68A,V = 0V SD J S GS t Reverse Recovery Time 21 31 ns T = 25C I = 68A ,V =15V rr J F DD Q Reverse Recovery Charge 54 81 nC di/dt = 430A/s rr 2 2016-08-04

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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