IRLB8314PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications V 30 V DSS D Low Voltage Power Tools R max DS(on) 2.4 ( V = 10V) GS m G ( V = 4.5V) 3.2 GS Qg 40 nC S (typical) Benefits I 171 D (Silicon Limited) Best in Class Performance for UPS/Inverter Applications A I 130A Very Low RDS(on) at 4.5V VGS D (Package Limited) Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current Lead-Free, RoHS Compliant S D G TO-220AB G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRLB8314PbF TO-220AB Tube 50 IRLB8314PbF Absolute Maximium Rating Symbol Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 171 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 120 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 130 D C GS I Pulsed Drain Current 664 DM P T = 25C Maximum Power Dissipation 125 W D C P T = 100C Maximum Power Dissipation 63 W D C Linear Derating Factor 0.83 W/C T Operating Junction and J -55 to + 175 C T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.2 JC R Case-to-Sink, Flat Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA Notes through are on page 8 1 2016-08-04 IRLB8314PbF Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D BV / T Breakdown Voltage Temp. Coefficient 14 mV/C Reference to 25C, I = 1mA D DSS J 1.9 2.4 V = 10V, I = 68A GS D R Static Drain-to-Source On-Resistance m DS(on) 2.6 3.2 V = 4.5V, I = 68A GS D V Gate Threshold Voltage 1.2 1.7 2.2 V GS(th) V = V , I = 100A DS GS D V / T Gate Threshold Voltage Coefficient -7.0 mV/C GS(th) J 1.0 V =24 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =24V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 307 S V = 15V, I =68A DS D Q Total Gate Charge 40 60 g Q Pre-Vth Gate-to-Source Charge 6.8 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 13 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 8.7 I = 68A gd D Q Gate Charge Overdrive 11.5 godr Q Switch Charge (Qgs2 + Qgd) 21.7 sw R Gate Resistance 1.7 G t Turn-On Delay Time 19 V = 15V d(on) DD t Rise Time 142 ns I = 68A r D t Turn-Off Delay Time 32 R = 1.8 d(off) G t Fall Time 72 V = 4.5V f GS C Input Capacitance 5050 V = 0V iss GS C Output Capacitance 890 pF V = 15V oss DS C Reverse Transfer Capacitance 500 = 1.0MHz rss Avalanche Characteristics E Single Pulse Avalanche Energy 180 AS (Thermally limited) mJ E Single Pulse Avalanche Energy Tested Value 900 AS (tested) I Avalanche Current 68 A AR E Repetitive Avalanche Energy mJ 12.5 AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 171 S (Body Diode) showing the A Pulsed Source Current integral reverse I 664 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C,I = 68A,V = 0V SD J S GS t Reverse Recovery Time 21 31 ns T = 25C I = 68A ,V =15V rr J F DD Q Reverse Recovery Charge 54 81 nC di/dt = 430A/s rr 2 2016-08-04