97390 IRLB8721PbF Applications HEXFET Power MOSFET Optimized for UPS/Inverter Applications V R max Qg (typ.) DSS DS(on) High Frequency Synchronous Buck 8.7m V = 10V Converters for Computer Processor Power 30V 7.6nC GS High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S D Very Low RDS(on) at 4.5V V GS G Ultra-Low Gate Impedance TO-220AB Fully Characterized Avalanche Voltage IRLB8721PbF and Current Lead-Free GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units V 30 Drain-to-Source Voltage DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 62 GS D C Continuous Drain Current, V 10V 44 A I T = 100C GS D C 250 I Pulsed Drain Current DM Maximum Power Dissipation 65 P T = 25C C D W P T = 100C Maximum Power Dissipation 33 D C 0.43 Linear Derating Factor W/C -55 to + 175 T Operating Junction and J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.3 JC Case-to-Sink, Flat Greased Surface C/W R 0.5 CS Junction-to-Ambient 62 R JA Notes through are on page 9 www.irf.com 1 4/22/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 21 mV/C Reference to 25C, I = 1mA DSS J D m R Static Drain-to-Source On-Resistance 6.5 8.7 V = 10V, I = 31A DS(on) GS D 13.1 16 V = 4.5V, I = 25A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 25A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -7.0 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 35 S V = 15V, I = 25A DS D Q Total Gate Charge 7.6 13 g Q Pre-Vth Gate-to-Source Charge 1.9 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 1.2 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 3.4 I = 25A gd D Q Gate Charge Overdrive 2.0 See Fig. 16 godr Q Switch Charge (Q + Q ) 4.6 sw gs2 gd Q Output Charge 7.9 nC V = 15V, V = 0V oss DS GS R Gate Resistance 2.3 3.8 G t Turn-On Delay Time 9.1 V = 15V, V = 4.5V d(on) DD GS t Rise Time 93 I = 25A r D R = 1.8 t Turn-Off Delay Time 9.0 ns G d(off) See Fig. 14 t Fall Time 17 f C Input Capacitance 1077 V = 0V iss GS C Output Capacitance 360 pF V = 15V oss DS C Reverse Transfer Capacitance 110 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 98 mJ AS I Avalanche Current 25 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 62 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 250 integral reverse SM (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 25A, V = 0V J S GS t Reverse Recovery Time 16 24 ns T = 25C, I = 25A, V = 15V rr J F DD Q Reverse Recovery Charge 14 21 nC di/dt = 200A/ s rr 2 www.irf.com