IRLB8748PbF HEXFET Power MOSFET Applications Optimized for UPS/Inverter Applications V R max Qg DSS DS(on) High Frequency Synchronous Buck 4.8m 30V 15nC Converters for Computer Processor Power High Frequency Isolated DC-DC D Converters with Synchronous Rectification for Telecom and Industrial use S D G Benefits TO-220AB Very Low RDS(on) at 4.5V V IRLB8748PbF GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage GD S and Current Gate Drain Source Lead-Free Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V (Silicon Limited) 92 I T = 25C C GS D I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 65 GS D C A Continuous Drain Current, V 10V (Package Limited) 78 I T = 25C GS D C I Pulsed Drain Current 370 DM P T = 25C Maximum Power Dissipation 75 D C W 38 P T = 100C Maximum Power Dissipation C D Linear Derating Factor 0.5 W/C T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R JC 2.0 Junction-to-Case R 0.5 CS Case-to-Sink, Flat Greased Surface C/W R JA 62 Junction-to-Ambient Notes through are on page 9 www.irf.com 1 04/22/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV 30 V V = 0V, I = 250A DSS Drain-to-Source Breakdown Voltage GS D V / T DSS J 21 mV/C Reference to 25C, I = 1mA Breakdown Voltage Temp. Coefficient D R DS(on) 3.8 4.8 V = 10V, I = 40A Static Drain-to-Source On-Resistance GS D m 5.5 6.8 V = 4.5V, I = 32A GS D V GS(th) 1.35 1.8 2.35 V Gate Threshold Voltage V = V , I = 50A DS GS D V /T GS(th) J -7.1 mV/C Gate Threshold Voltage Coefficient I 1.0 V = 24V, V = 0V DSS Drain-to-Source Leakage Current DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I 100 V = 20V GSS Gate-to-Source Forward Leakage GS nA -100 V = -20V Gate-to-Source Reverse Leakage GS gfs 196 S V = 15V, I = 32A Forward Transconductance DS D Q g 15 23 Total Gate Charge Q gs1 3.6 V = 15V Pre-Vth Gate-to-Source Charge DS Q gs2 2.2 nC V = 4.5V Post-Vth Gate-to-Source Charge GS Q I = 32A gd Gate-to-Drain Charge 5.9 D Q godr Gate Charge Overdrive 3.9 Q sw Switch Charge (Q + Q ) 8.1 gs2 gd Q oss Output Charge 11 nC V = 16V, V = 0V DS GS R Gate Resistance 2.0 3.5 G t d(on) 14 V = 15V, V = 4.5V Turn-On Delay Time DD GS t r 96 I = 32A Rise Time D ns t d(off) 16 R = 1.8 Turn-Off Delay Time G t f 34 Fall Time C iss 2139 V = 0V Input Capacitance GS C 464 V = 15V oss Output Capacitance pF DS C 199 rss Reverse Transfer Capacitance = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS 114 mJ Single Pulse Avalanche Energy I AR 32 A Avalanche Current E AR 7.5 mJ Repetitive Avalanche Energy Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S MOSFET symbol Continuous Source Current 92 (Body Diode) showing the A I integral reverse SM Pulsed Source Current 370 (Body Diode) p-n junction diode. V SD 1.0 V T = 25C, I = 32A, V = 0V Diode Forward Voltage J S GS t rr 2335ns T = 25C, I = 32A, V = 15V Reverse Recovery Time DD J F Q di/dt = 200A/s rr 39 59 nC Reverse Recovery Charge t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Forward Turn-On Time 2 www.irf.com