HEXFET Power MOSFET V 40 V DS R DS(on) max 3.2 m ( V = 4.5V) GS Q 43 nC g (typical) R 1.2 G (typical) I D 100 A ( T = 25C) mb PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features Benefits Low R (3.2m Vgs = 4.5V ) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 0.8C/W) Enable better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Base part number Package Type Standard Pack Orderable part number Form Quantity IRLH5034PBF PQFN 5mm x 6mm Tape and Reel 4000 IRLH5034TRPBF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 40 DS V V Gate-to-Source Voltage 16 GS I T = 25C Continuous Drain Current, V 10V 29 D A GS I T = 70C Continuous Drain Current, V 10V 23 D A GS A I T = 25C Continuous Drain Current, V 10V 100 D mb GS I T = 100C Continuous Drain Current, V 10V 100 D mb GS I Pulsed Drain Current 400 DM P T = 25C Power Dissipation 3.6 D A W Power Dissipation P T = 25C 156 D mb Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 IRLH5034PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250 A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.04 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 2.0 2.4 V = 10V, I = 50A DS(on) GS D m 2.7 3.2 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.0 2.5 V GS(th) V = V , I = 150 A DS GS D V Gate Threshold Voltage Coefficient -6.4 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 40V, V = 0V DSS DS GS A 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS gfs Forward Transconductance 130 S V = 10V, I = 50A DS D Q Total Gate Charge 82 nC V = 10V, V = 20V, I = 50A g GS DS D Q Total Gate Charge 43 65 g Q Pre-Vth Gate-to-Source Charge 8.1 V = 20V gs1 DS Q Post-Vth Gate-to-Source Charge 5.0 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 24 I = 50A gd D Q Gate Charge Overdrive 5.9 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 29 sw gs2 gd Q Output Charge 31 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.2 G t Turn-On Delay Time 21 V = 20V, V = 4.5V d(on) DD GS t Rise Time 54 I = 50A r D ns t Turn-Off Delay Time 31 R =1.8 d(off) G t Fall Time 21 See Fig.15 f C Input Capacitance 4730 V = 0V iss GS C Output Capacitance 860 V = 25V oss pF DS C Reverse Transfer Capacitance 460 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E mJ 360 AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 25 38 ns = 25C, I = 50A, V = 20V T rr J F DD Q di/dt = 400A/ s Reverse Recovery Charge 74 110 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R Junction-to-Mounting Base 0.5 0.8 JC-mb R (Top) Junction-to-Case 15 C/W JC R Junction-to-Ambient 35 JA Junction-to-Ambient R (<10s) 22 JA