IRLH7134PbF HEXFET Power MOSFET V 40 V DSS R max DS(on) 3.3 m ( V = 10V) GS Q g (typical) 39 nC I D 50 A ( T = 25C) C (Bottom) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features Benefits Lower Conduction Losses Low R (< 4.7m V = 4.5V) DS(ON) GS Low Thermal Resistance to PCB (<1.2C/W) Enables better thermal dissipation Low Profile (<0.9mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable Part Number Package Type Note Form Quantity IRLH7134TRPbF PQFN 5mm x 6 mm Tape and Reel 4000 IRLH7134TR2PbF PQFN 5mm x 6 mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 40 DS V V Gate-to-Source Voltage 16 GS I T = 25C Continuous Drain Current, V 10V 26 D A GS I T = 70C Continuous Drain Current, V 10V 21 D A GS I T = 25C Continuous Drain Current, V 10V 134 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 85 D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 50 D C(Bottom) GS I Pulsed Drain Current 640 DM P T = 25C Power Dissipation 3.6 D A W P T = 25C Power Dissipation 104 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Notes through are on page 9 1 2016-08-01 IRLH7134PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 37 mV/C Reference to 25C, I = 1mA BV / T D DSS J 2.8 3.3 V = 10V, I = 50A GS D R Static Drain-to-Source On-Resistance m DS(on) 3.9 4.9 V = 4.5V, I = 40A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 100A GS(th) DS GS D V Gate Threshold Voltage Coefficient -5.6 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 40V, V = 0V DSS DS GS A 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS gfs Forward Transconductance 120 S V = 10V, I = 50A DS D Q Total Gate Charge 39 58 g Q Pre-Vth Gate-to-Source Charge 9.0 V = 20V gs1 DS nC V = 4.5V Q Post-Vth Gate-to-Source Charge 4.5 gs2 GS Q Gate-to-Drain Charge 16 I = 50A gd D Q Gate Charge Overdrive 9.5 godr Q Switch Charge (Q + Q) 20.5 sw gs2 gd Q Output Charge 23 nC V = 16V, V = 0V oss DS GS R Gate Resistance 0.6 G t Turn-On Delay Time 21 V = 20V, V = 4.5V d(on) DD GS t Rise Time 75 ns I = 50A r D t Turn-Off Delay Time 18 d(off) R = 1.7 G t Fall Time 13 f C Input Capacitance 3720 V = 0V iss GS C Output Capacitance 610 pF V = 25V oss DS C Reverse Transfer Capacitance 350 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 125 mJ AS I Avalanche Current 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 50 (Body Diode) showing the G A integral reverse I Pulsed Source Current SM S 640 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V =0V SD J S GS t Reverse Recovery Time 25 38 ns T = 25C, I = 50A, V = 20V rr J F DD di/dt = 400A/s Q Reverse Recovery Charge 74 110 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 1.2 R (Bottom) JC Junction-to-Case 30 C/W R (Top) JC Junction-to-Ambient 35 R JA Junction-to-Ambient 22 R (<10s) JA 2 2016-08-01