IRLHM630PbF HEXFET Power MOSFET V 30 V DSS V 12 V GS R max DS(on) 3.5 ( V = 4.5V) GS m ( V = 2.5V) 4.5 GS Qg 41 nC (typical) I D 40 A PQFN 3.3 x 3.3 mm ( T = 25C) C (Bottom) Applications Battery Operated DC Motor Inverter MOSFET Secondary Side Synchronous Rectification MOSFET Features Benefits Low R (< 3.5m ) Lower Conduction Losses DSon Low Thermal Resistance to PCB (<3.4C/W) Enable better thermal dissipation Low Profile (< 1.0 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRLHM630TRPbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRLHM630TR2PBF PQFN 3.3mm x 3.3mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 4.5V 21 D A GS I T = 70C Continuous Drain Current, V 4.5V 17 D A GS I T = 25C Continuous Drain Current, V 4.5V 40 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 4.5V 40 D C(Bottom) GS I Pulsed Drain Current 160 DM P T = 25C Power Dissipation 2.7 D A W T = 25C Power Dissipation 37 P D C(Bottom) Linear Derating Factor 0.022 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback September 25, 2015 IRLHM630PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 2.1 mV/C Reference to 25C, I = 1mA BV / T D DSS J 2.2 3.2 V = 10V, I = 20A GS D R Static Drain-to-Source On-Resistance 2.5 3.5 m V = 4.5V, I = 20A DS(on) GS D 3.5 4.5 V = 2.5V, I = 20A GS D V Gate Threshold Voltage 0.5 0.8 1.1 V GS(th) V = V , I = 50A DS GS D Gate Threshold Voltage Coefficient -3.8 mV/C V GS(th) I Drain-to-Source Leakage Current 1 V = 24V, V = 0V DSS DS GS A 150 V = 24V,V = 0V,T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = - 12V GS gfs Forward Transconductance 140 S V = 10V, I = 20A DS D Q Total Gate Charge 41 62 V = 15V g DS Q Gate-to-Source Charge 4.6 nC V = 4.5V GS gs I = 20A (See Fig.17 & 18) Q Gate-to-Drain Charge 14 gd D R Gate Resistance 2.6 G t Turn-On Delay Time 9.1 V = 10V, V = 4.5V d(on) DD GS I = 20A t Rise Time 32 r D ns t Turn-Off Delay Time 65 R = 1.0 d(off) G t Fall Time 43 See Fig.15 f C Input Capacitance 3170 V = 0V iss GS C Output Capacitance 330 pF V = 25V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 80 mJ AS (Thermally limited) I Avalanche Current 20 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 40 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 160 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 20 30 ns T = 25C, I = 20A, V = 15V rr J F DD Q Reverse Recovery Charge 30 45 nC di/dt = 400A/s rr Thermal Resistance Parameter Typ. Max. Units R (Bottom) Junction-to-Case 3.4 JC (Top) Junction-to-Case 37 R JC C/W Junction-to-Ambient 46 R JA Junction-to-Ambient 31 R (<10s) JA 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback September 25, 2015