HEXFET Power MOSFET V 20 V DS TOP VIEW V 12 V GS R DS(on) max 11.7 m D1 6D ( V = 4.5V) GS R DS(on) max D2 D 5D 15.5 m ( V = 2.5V) GS I D S G 3 4S 12 A ( T = 25C) C (Bottom) 2mm x 2mm PQFN Applications Features and Benefits Features Resulting Benefits Low R ( 11.7m) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 13C/W) Enable better thermal dissipation Low Profile ( 1.0mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRLHS6242TRPbF PQFN 2mm x 2mm Tape and Reel 4000 IRLHS6242TR2PbF PQFN 2mm x 2mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 20 DS V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 4.5V 10 A GS D I T = 70C Continuous Drain Current, V 4.5V 8.3 GS D A Continuous Drain Current, V 4.5V 22 I T = 25C C(Bottom) GS D A Continuous Drain Current, VGS 4.5V I T = 70C 18 C(Bottom) D I T = 25C Continuous Drain Current, V 4.5V (Package Limited) 12 GS D C(Bottom) Pulsed Drain Current I 88 DM Power Dissipation P T = 25C 1.98 D A W Power Dissipation P T = 25C 9.6 D C(Bottom) Linear Derating Factor 0.016 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 6.8 mV/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 9.4 11.7 V = 4.5V, I = 8.5A DS(on) GS D m = 2.5V, I = 8.5A 12.4 15.5 V GS D V Gate Threshold Voltage 0.5 0.8 1.1 V GS(th) V = V , I = 10A DS GS D V Gate Threshold Voltage Coefficient -4.2 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 16V, V = 0V DSS DS GS A 150 V = 16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS gfs Forward Transconductance 36 S V = 10V, I = 8.5A DS D Q 14 V = 10V g Total Gate Charge DS Q 1.5 nC V = 4.5V gs Gate-to-Source Charge GS Q 6.3 I = 8.5A (See Fig.17 & 18) gd Gate-to-Drain Charge D R Gate Resistance 2.1 G t Turn-On Delay Time 5.8 V = 10V, V = 4.5V d(on) DD GS t ID = 8.5A Rise Time 15 r ns t Turn-Off Delay Time 19 R =1.8 d(off) G t Fall Time 13 See Fig.15 f C Input Capacitance 1110 V = 0V iss GS C Output Capacitance 260 pF V = 10V oss DS C Reverse Transfer Capacitance 180 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current S MOSFET symbol 22 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 88 S (Body Diode) p-n junction diode. V T = 25C, I = 8.5A , V = 0V Diode Forward Voltage 1.2 V SD J S GS t Reverse Recovery Time 15 23 ns T = 25C, I = 8.5A , V = 10V rr J F DD Q Reverse Recovery Charge 12 18 nC di/dt = 210A/ s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 13 JC Junction-to-Case R (Top) 94 C/W JC Junction-to-Ambient 63 R JA Junction-to-Ambient R (<10s) 46 JA Repetitive rating pulse width limited by max. junction temperature. Package is limited to 12A by die-source to lead-frame bonding technology. Pulse width 400 s duty cycle 2%. When mounted on 1 ich square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. Calculated continuous current based on maximum allowable junction temperature.