HEXFET Power MOSFET V 30 V DS V 12 V GS R DS(on) max 15.5 m ( V = 4.5V) GS Q 11 nC g (typical) I D 12 A ( T = 25C) C (Bottom) 2mm x 2mm PQFN Applications Features and Benefits Features Resulting Benefits Low R ( 15.5m) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 13C/W) Enable better thermal dissipation Low Profile ( 0.9 mm) results in Increased Power Density Easier Manufacturing Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRLHS6342TRPbF PQFN 2mm x 2mm Tape and Reel 4000 IRLHS6342TR2PbF PQFN 2mm x 2mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 10V 8.7 GS D A Continuous Drain Current, V 10V I T = 70C 6.9 D A GS I T = 25C Continuous Drain Current, V 10V 19 C(Bottom) GS D A I T = 70C Continuous Drain Current, V 10V 15 GS D C(Bottom) Continuous Drain Current, V 10V (Wirebond Limited) 12 I T = 25C C(Bottom) GS D Pulsed Drain Current I 76 DM Power Dissipation P T = 25C 2.1 D A W Power Dissipation P T = 70C 1.3 A D Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 TOP VIEW D1 6D D2 D 5D S G 3 4S Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250 A GS D V /T Breakdown Voltage Temp. Coefficient 22 mV/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 12.0 15.5 V = 4.5V, I = 8.5A DS(on) GS D m 15.0 19.5 V = 2.5V, I = 8.5A GS D V Gate Threshold Voltage 0.5 1.1 V GS(th) V = V , I = 10 A DS GS D V Gate Threshold Voltage Coefficient -4.2 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 = 12V GSS V GS nA = -12V Gate-to-Source Reverse Leakage -100 V GS gfs Forward Transconductance 39 S V = 10V, I = 8.5A DS D Q V = 15V Total Gate Charge 11 g DS Q Gate-to-Source Charge 0.5 nC V = 4.5V gs GS Q Gate-to-Drain Charge 4.6 I = 8.5A (See Fig. 6 & 17) gd D R Gate Resistance 2.1 G t Turn-On Delay Time 4.9 V = 15V, V = 4.5V d(on) DD GS t Rise Time 13 I = 8.5A r D ns t Turn-Off Delay Time 19 R =1.8 d(off) G t Fall Time 13 See Fig.18 f C Input Capacitance 1019 V = 0V iss GS C pF Output Capacitance 97 V = 25V oss DS C Reverse Transfer Capacitance 70 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 14 mJ AS Avalanche Current I 8.5 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 12 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 76 S (Body Diode) p-n junction diode. V T = 25C, I = 8.5A, V = 0V Diode Forward Voltage 1.2 V SD J S GS t T = 25C, I = 8.5A, V = 15V Reverse Recovery Time 11 17 ns rr J F DD Q di/dt = 300 A/ s Reverse Recovery Charge 13 20 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 13 JC Junction-to-Case R (Top) 90 C/W JC Junction-to-Ambient R 60 JA Junction-to-Ambient (<10s) R 42 JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 0.39mH, R = 50, I = 8.5A. J G AS Pulse width 400s duty cycle 2%. R is measured at T of approximately 90C. J When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 12A by die-source to lead-frame bonding technology