PD - 97630A IRLML2246TRPbF HEXFET Power MOSFET V -20 V DS V 12 V GS Max R DS(on) max 135 m ( V = -4.5V) GS TM R Micro3 (SOT-23) DS(on) max 236 m IRLML2246TRPbF ( V = -2.5V) GS Application(s) System/Load Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL1, Consumer qualification Increased reliability Absolute Maximum Ratings Symbol Parameter Max. Units V V DS Drain-Source Voltage -20 I T = 25C Continuous Drain Current, V -10V -2.6 D A GS I T = 70C Continuous Drain Current, V -10V D A GS -2.1 A I -11 DM Pulsed Drain Current P T = 25C D A Maximum Power Dissipation 1.3 W P T = 70C 0.80 D A Maximum Power Dissipation Linear Derating Factor 0.01 W/C V Gate-to-Source Voltage 12 V GS T T -55 to + 150 J, STG Junction and Storage Temperature Range C Thermal Resistance Symbol Parameter Typ. Max. Units R JA Junction-to-Ambient 100 C/W R 99 JA Junction-to-Ambient (t<10s) ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 03/09/12 Electric Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250 A GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 9.5 mV/C Reference to 25C, I = -1mA D 90 135 V = -4.5V, I = -2.6A GS D R Static Drain-to-Source On-Resistance m DS(on) 157 236 V = -2.5V, I = -2.1A GS D V GS(th) Gate Threshold Voltage -0.4 -1.1 V V = V , I = -10 A DS GS D I DSS -1.0 V = -16V, V = 0V DS GS Drain-to-Source Leakage Current A -150 V = -16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 V = 12V GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS R Internal Gate Resistance 16 G gfs Forward Transconductance 3.4 S V = -10V, I = -2.6A DS D Q g Total Gate Charge 2.9 I = -2.6A D Q gs Gate-to-Source Charge 0.52 nC V =-10V DS Q Gate-to-Drain Mille) Charge 1.2 V = -4.5V gd GS t d(on) Turn-On Delay Time 5.3 V =-10V DD t r Rise Time 7.7 I = -1.0A D ns t Turn-Off Delay Time 26 R = 6.8 d(off) G t Fall Time 16 V = -4.5V f GS C iss Input Capacitance 220 V = 0V GS C oss Output Capacitance 70 pF V = -16V DS C Reverse Transfer Capacitance 48 = 1.0KHz rss Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol D -1.3 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -11 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage -1.2 V T = 25C, I = -2.6A, V = 0V J S GS t Reverse Recovery Time 17 26 ns T = 25C, V = -15V, I =-2.6A rr J R F Q di/dt = 100A/s Reverse Recovery Charge 6.2 9.3 nC rr 2 www.irf.com