PD - 97584A IRLML6346TRPbF HEXFET Power MOSFET V 30 V DS V 12 V GS Max R DS(on) max 63 m ( V = 4.5V) GS TM R Micro3 (SOT-23) DS(on) max 80 m IRLML6346TRPbF ( V = 2.5V) GS Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package results in Multi-vendor compatibility RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL1, Consumer Qualification Increased Reliability Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 30 V I T = 25C Continuous Drain Current, V 10V D A GS 3.4 I T = 70C Continuous Drain Current, V 10V 2.7 A D A GS I DM Pulsed Drain Current 17 P T = 25C 1.3 D A Maximum Power Dissipation W P T = 70C D A Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 W/C V 12 GS Gate-to-Source Voltage V T T J, STG Junction and Storage Temperature Range -55 to + 150 C Thermal Resistance Symbol Parameter Typ. Max. Units R 100 JA Junction-to-Ambient C/W R JA 99 Junction-to-Ambient (t<10s) ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 03/09/12 Electric Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1mA D 46 63 V = 4.5V, I = 3.4A GS D R Static Drain-to-Source On-Resistance m DS(on) 59 80 V = 2.5V, I = 2.7A GS D V GS(th) Gate Threshold Voltage 0.5 0.8 1.1 V V = V , I = 10A DS GS D I DSS 1.0 V =24V, V = 0V DS GS Drain-to-Source Leakage Current A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS R G Internal Gate Resistance 3.9 gfs Forward Transconductance 9.5 S V = 10V, I = 3.4A DS D Q g Total Gate Charge 2.9 I = 3.4A D Q gs Gate-to-Source Charge 0.13 nC V =15V DS Q Gate-to-Drain Mille) Charge 1.1 V = 4.5V gd GS t Turn-On Delay Time 3.3 V =15V d(on) DD t r Rise Time 4.0 I = 1.0A D ns t d(off) Turn-Off Delay Time 12 R = 6.8 G t Fall Time 4.9 V = 4.5V f GS C iss Input Capacitance 270 V = 0V GS C oss Output Capacitance 32 pF V = 24V DS C Reverse Transfer Capacitance 21 = 1.0MHz rss Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol D 1.3 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 17 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.2 V T = 25C, I = 3.4A, V = 0V J S GS t Reverse Recovery Time 8.8 13 ns T = 25C, V = 24V, I =1.3A rr J R F Q di/dt = 100A/ s Reverse Recovery Charge 2.7 4.1 nC rr 2 www.irf.com