HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint G 1 Low Profile (<1.1mm) V = -12V DSS Available in Tape and Reel 3 D Fast Switching 1.8V Gate Rated R = 0.05 DS(on) S 2 Lead-Free RoHS Compliant, Halogen-Free These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry s smallest footprint. This package, dubbed the Micro3 , is ideal for Micro3 applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRLML6401TRPbF Micro3 (SOT-23) Tape and Reel 3000 IRLML6401TRPbF Parameter Max. Units V Drain- Source Voltage -12 V DS I T = 25C Continuous Drain Current, V -4.5V -4.3 D A GS I T = 70C Continuous Drain Current, V -4.5V -3.4 A D A GS I Pulsed Drain Current -34 DM P T = 25C Power Dissipation 1.3 D A P T = 70C Power Dissipation 0.8 D A Linear Derating Factor 0.01 W/C E Single Pulse Avalanche Energy 33 mJ AS V Gate-to-Source Voltage 8.0 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Typ. Max. Units R Maximum Junction-to-Ambient 75 100 JA %& Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -12 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.007 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.050 V = -4.5V, I = -4.3A GS D R Static Drain-to-Source On-Resistance ,,, 0.085 V = -2.5V, I = -2.5A GS D DS(on) ,,, 0.125 V = -1.8V, I = -2.0A GS D V Gate Threshold Voltage -0.40 -0.55 -0.95 V V = V , I = -250 A GS(th) DS GS D g Forward Transconductance 8.6 S V = -10V, I = -4.3A fs DS D -1.0 V = -12V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A -25 V = -9.6V, V = 0V, T = 55C DS GS J Gate-to-Source Forward Leakage -100 V = -8.0V GS nA Gate-to-Source Reverse Leakage 100 V = 8.0V GS Q Total Gate Charge 10 15 I = -4.3A g D Q Gate-to-Source Charge 1.4 2.1 nC V = -10V gs DS Q Gate-to-Drain Mille) Charge 2.6 3.9 V = -5.0V gd GS t Turn-On Delay Time 11 V = -6.0V d(on) DD ns t Rise Time 32 I = -1.0A r D t Turn-Off Delay Time 250 R = 6.0 d(off) D t Fall Time 210 R = 89 f G C Input Capacitance 830 V = 0V iss GS C Output Capacitance 180 pF V = -10V oss DS C Reverse Transfer Capacitance 125 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -1.3 (Body Diode) showing the G I Pulsed Source Current integral reverse SM -34 S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C, I = -1.3A, V = 0V SD J S GS t Reverse Recovery Time 22 33 ns T = 25C, I = -1.3A rr J F Q Reverse RecoveryCharge 8.0 12 nC di/dt = -100A/s rr Repetitive rating pulse width limited by ( ) * + & max. junction temperature. * Pulse width 300s duty cycle 2%. Starting T = 25C, L = 3.5mH J R = 25, I = -4.3A. G AS %&