PD - 9.1508C IRLMS1503 HEXFET Power MOSFET l Generation V Technology 1 6 D D l Micro6 Package Style V = 30V DSS l Ultra Low Rds(on) 2 5 D D l N-Channel MOSFET 3 4 G S R = 0.10 DS(on) Description Fifth Generation HEXFETs from International Rectifier Top View utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is Micro6 ideal for applications where printed circuit board space is at a premium. It s unique thermal design and R DS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 3.2 D A GS I T = 70C Continuous Drain Current, V 10V 2.6 A D A GS I Pulsed Drain Current 18 DM P T = 25C Power Dissipation 1.7 W D A Linear Derating Factor 13 mW/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Ratings Parameter Min. Typ. Max Units R Maximum Junction-to-Ambient 75 C/W JA 1/12/98IRLMS1503 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.037 V/C Reference to 25C, I = 1mA D 0.10 V = 10V, I = 2.2A GS D R Static Drain-to-Source On-Resistance DS(on) 0.20 V = 4.5V, I = 1.1A GS D V Gate Threshold Voltage 1.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 1.1 S V = 10V, I = 1.1A fs DS D 1.0 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 25 V = 24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 6.4 9.6 I = 2.2A g D Q Gate-to-Source Charge 1.1 1.7 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 1.9 2.8 V = 10V, See Fig. 6 and 9 gd GS t Turn-On Delay Time 4.6 V = 15V d(on) DD t Rise Time 4.4 I = 2.2A r D ns t Turn-Off Delay Time 10 R = 6.0 d(off) G t Fall Time 2.0 R = 6.7, See Fig. 10 f D C Input Capacitance 210 V = 0V iss GS C Output Capacitance 90 pF V = 25V oss DS C Reverse Transfer Capacitance 32 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 1.7 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 18 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 2.2A, V = 0V SD J S GS t Reverse Recovery Time 36 54 ns T = 25C, I = 2.2A rr J F Q Reverse RecoveryCharge 39 58 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) I 2.2A, di/dt 150A/s, V V , Surface mounted on FR-4 board, t 5sec. SD DD (BR)DSS T 150C J