IRLMS1902 HEXFET Power MOSFET A 1 6 D D V = 20V DSS 2 5 D D 3 4 G S R = 0.10 DS(on) Top View Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with R DS(on) 60% less than a similar size SOT-23. This package is Micro6 ideal for applications where printed circuit board space is at a premium. It s unique thermal design and R DS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. % & ( ) * + +, ) - . / 0 ) . 1. 2 ) , 3 0 + 4 0 5 6 3 3 2 ) + + 37 888 888 % www.irf.com 1 + +, ) 9 888 888 : 9 3 ) 888 888 0 ) 3 888 888 0 , ) + +, ) B +0 ) 888 888 * < < 888 888 : ( ) ) ) 888 888 , 888 888 + +, ) & / : 888 888 * + +, ) ( & / 888 888 * + +, ) 0 . & / 888 888 + + = * < 888 = * + +, ) < 888 > = * + + 5 A < 888 , ( > +B 1 3 888 888 0 3 888 888 +B 1 3 888 888 0 ( 3 888 888 0 , , ( ) ) 888 888 B ) ) 888 888 ( 0 . ) ) 888 888 C 5DE , ( % D , ) 5B,(F 137 888 888 91 A < < G , ) . 888 888 91 A + G ) S ( 888 888 0 . 0 ) . 1 3 888 = 0 . 0 ) . 1 < 888 : 0 . H < 3 71 < : H 1 )1) I 3 6 G ) 3 , A I : , ) 3 (0+ 7 ) SD 2 www.irf.com