IRLMS2002PbF HEXFET Power MOSFET Ultra Low On-Resistance A 1 6 D N-Channel MOSFET D V = 20V Surface Mount DSS 2 5 D Available in Tape & Reel D 2.5V Rated 3 4 Lead-Free G S R = 0.030 DS(on) Top View Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with R 60% DS(on) less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It s unique thermal design and R reduction DS(on) enables a current-handling increase of nearly 300% Micro6 compared to the SOT-23. Parameter Max. Units V Drain- Source Voltage 20 V DS I T = 25C Continuous Drain Current, V 4.5V 6.5 D A GS I T = 70C Continuous Drain Current, V 4.5V 5.2 A D A GS I Pulsed Drain Current 20 DM P T = 25C Power Dissipation 2.0 D A P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 0.016 W/C V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 62.5 C/W JA www.irf.com 1 1/18/05 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.016 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.030 V = 4.5V, I = 6.5A GS D R Static Drain-to-Source On-Resistance DS(on) 0.045 V = 2.5V, I = 5.2A GS D V Gate Threshold Voltage 0.60 1.2 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 13 S V = 10V, I = 6.5A fs DS D 1.0 V = 16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS 25 V = 16V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 15 22 I = 6.5A g D Q Gate-to-Source Charge 2.2 3.3 nC V = 10V gs DS Q Gate-to-Drain Mille) Charge 3.5 5.3 V = 5.0V gd GS t Turn-On Delay Time 8.5 V = 10V d(on) DD t Rise Time 11 I = 1.0A r D t Turn-Off Delay Time 36 R = 6.0 d(off) G t Fall Time 16 R = 10 f D C Input Capacitance 1310 V = 0V iss GS C Output Capacitance 150 pF V = 15V oss DS C Reverse Transfer Capacitance 36 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.0 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 20 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 1.7A, V = 0V SD J S GS t Reverse Recovery Time 19 29 ns T = 25C, I = 1.7A rr J F Q Reverse Recovery Charge 13 20 nC di/dt = 100A/s rr Repetitive rating pulse width limited by Surface mounted on FR-4 board, t max. junction temperature. ( See fig. 11 ) Pulse width 400s duty cycle 2 www.irf.com