IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) V = 55V DSS Straight Lead (IRLU024N) Advanced Process Technology R = 0.065 DS(on) G Fast Switching Fully Avalanche Rated I = 17A D S Lead-Free Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for D-Pak I-Pak through-hole mounting applications. Power dissipation levels up to 1.5 watts IRLR024NPbF IRLU024NPbF are possible in typical surface mount applications. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 17 D C GS I T = 100C Continuous Drain Current, V 10V 12 A D C GS I Pulsed Drain Current 72 DM P T = 25C Power Dissipation 45 W D C Linear Derating Factor 0.3 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 68 mJ AS I Avalanche Current 11 A AR E Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.3 JC R Case-to-Ambient (PCB mount)** 50 C/W JA R Junction-to-Ambient 110 JA %& (( www.irf.com 1 12/6/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.061 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.065 V = 10V, I = 10A GS D R Static Drain-to-Source On-Resistance DS(on) 0.080 V = 5.0V, I = 10A GS D 0.110 V = 4.0V, I = 9.0A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 8.3 S V = 25V, I = 11A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Q Total Gate Charge 15 I = 11A g D Q Gate-to-Source Charge 3.7 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 8.5 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 7.1 V = 28V d(on) DD t Rise Time 74 I = 11A r D ns t Turn-Off Delay Time 20 R = 12, V = 5.0V d(off) G GS t Fall Time 29 R = 2.4, See Fig. 10 f D D Between lead, L Internal Drain Inductance ))) 4.5 ))) D nH 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 480 V = 0V iss GS C Output Capacitance 130 pF V = 25V oss DS C Reverse Transfer Capacitance 61 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 17 (Body Diode) showing the & G I Pulsed Source Current integral reverse SM 72 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 11A, V = 0V SD J S GS t Reverse Recovery Time 60 90 ns T = 25C, I = 11A rr J F Q Reverse RecoveryCharge 130 200 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. (See fig. 11) V = 25V, starting T = 25C, L = 790H This is applied for I-PAK, L of D-PAK is measured between DD J S R = 25, I = 11A. (See Figure 12) lead and center of die contact G AS I 11A, di/dt 290A/s, V V , Uses IRLZ24N data and test conditions. SD DD (BR)DSS T 175C J 2 www.irf.com