PD - 95553B IRLR3105PbF IRLU3105PbF HEXFET Power MOSFET Features Logic-Level Gate Drive D Advanced Process Technology V = 55V DSS Ultra Low On-Resistance 175C Operating Temperature Fast Switching R = 0.037 DS(on) G Repetitive Avalanche Allowed up to Tjmax Lead-Free I = 25A D S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, D-Pak I-Pak infrared, or wave soldering techniques. The straight lead version IRLR3105PbF IRLU3105PbF (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 25 D C GS I T = 100C Continuous Drain Current, V 10V 18 A D C GS I Pulsed Drain Current 100 DM P T = 25C Power Dissipation 57 W D C Linear Derating Factor 0.38 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 61 mJ AS E (tested) Single Pulse Avalanche Energy Tested Value 94 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 3.4 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.65 JC R Junction-to-Ambient (PCB mount)* 50 C/W JA R Junction-to-Ambient 110 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.056 V/C Reference to 25C, I = 1mA (BR)DSS J D 30 37 V = 10V, I = 15A GS D m R Static Drain-to-Source On-Resistance DS(on) 35 43 V = 5.0V, I = 13A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 15 S V = 25V, I = 15A fs DS D 20 V = 55V, V = 0V DS GS A I Drain-to-Source Leakage Current DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 16V GS nA Gate-to-Source Reverse Leakage -200 V = -16V GS Q Total Gate Charge 20 I = 15A g D Q Gate-to-Source Charge 5.6 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 9.0 V = 5.0V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 8.0 V = 28V d(on) DD t Rise Time 57 I = 15A r D t Turn-Off Delay Time 25 R = 24 d(off) G t Fall Time 37 V = 5.0V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 710 V = 0V iss GS C Output Capacitance 150 V = 25V oss DS C Reverse Transfer Capacitance 28 pF = 1.0MHz, See Fig. 5 rss C Output Capacitance 890 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 110 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 210 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 25 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 100 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 15A, V = 0V SD J S GS t Reverse Recovery Time 52 78 ns T = 25C, I = 15A, V = 28V rr J F DD Q Reverse RecoveryCharge 82 120 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D When mounted on 1 square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note AN-994 Notes through are on page 11 2 www.irf.com