PD - 97284A IRLR3114ZPbF IRLU3114ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature Fast Switching V = 40V DSS Repetitive Avalanche Allowed up to Tjmax Logic Level G R = 4.9m DS(on) Description This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. D-Pak I-Pak IRLR3114ZPbF IRLU3114ZPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C 130 Continuous Drain Current, V 10V (Silicon Limited) D C GS I T = 100C 89 A Continuous Drain Current, V 10V (Silicon Limited) D C GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 42 D C GS I 500 DM Pulsed Drain Current P T = 25C 140 W D C Power Dissipation Linear Derating Factor 0.95 W/C V 16 V GS Gate-to-Source Voltage E AS (Thermally limited) 130 mJ Single Pulse Avalanche Energy E (Tested ) AS 260 Single Pulse Avalanche Energy Tested Value I See Fig.12a, 12b, 15, 16 A AR Avalanche Current E AR mJ Repetitive Avalanche Energy T -55 to + 175 J Operating Junction and T C Storage Temperature Range STG Reflow Soldering Temperature, for 10 seconds 300 Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R JC 1.05 Junction-to-Case R JA 40 C/W Junction-to-Ambient (PCB mount) R 110 JA Junction-to-Ambient www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage40 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.032 V/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 3.9 4.9 V = 10V, I = 42A GS D 5.2 6.5 V = 4.5V, I = 42A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 100A GS(th) DS GS D gfs Forward Transconductance 98 S V = 10V, I = 42A DS D I DSS Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 16V GSS GS Gate-to-Source Reverse Leakage-100 V = -16V GS Q g Total Gate Charge 40 56 I = 42A D Q gs Gate-to-Source Charge12nC V = 20V DS Q Gate-to-Drain Mille) Charge18 V = 4.5V gd GS t Turn-On Delay Time 25 V = 20V d(on) DD t r Rise Time 140 I = 42A D t d(off) Turn-Off Delay Time 33 ns R = 3.7 G t Fall Time 50 V = 4.5V f GS D L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 3810 V = 0V iss GS C oss Output Capacitance 650 V = 25V DS C rss Reverse Transfer Capacitance 350 pF = 1.0MHz C Output Capacitance 2390 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 580 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. oss Effective Output Capacitance 820 V = 0V, V = 0V to 32V GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 130 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 500 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage1.3V T = 25C, I = 42A, V = 0V SD J S GS t Reverse Recovery Time 3045ns T = 25C, I = 42A, V = 20V rr DD J F Q di/dt = 100A/s Reverse Recovery Charge 27 41 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com