IRLR3717TRLPBF Infineon

IRLR3717PbF IRLU3717PbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck V R max Qg DSS DS(on) Converters for Computer Processor Power High Frequency Isolated DC-DC 4.0m 20V 21nC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits Very Low R at 4.5V V DS(on) GS Ultra-Low Gate Impedance D-Pak I-Pak Fully Characterized Avalanche Voltage IRLR3717 IRLU3717 and Current Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 20 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 120 I T = 25C GS A C D Continuous Drain Current, V 10V 81 I T = 100C D C GS Pulsed Drain Current I 460 DM P T = 25C Maximum Power Dissipation 89 W C D P T = 100C Maximum Power Dissipation 44 C D Linear Derating Factor 0.59 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.69 C/W JC Junction-to-Ambient (PCB Mount) R 50 JA R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 12/08/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 12 mV/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 3.4 4.0 V = 10V, I = 15A GS D 4.6 5.5 V = 4.5V, I = 12A GS D V GS(th) Gate Threshold Voltage 1.55 2.0 2.45 V V = V , I = 250A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -6.4 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 49 S V = 10V, I = 12A DS D Q g Total Gate Charge 21 31 Q gs1 Pre-Vth Gate-to-Source Charge 6.4 V = 10V DS Q gs2 Post-Vth Gate-to-Source Charge 1.9 nC V = 4.5V GS Q gd Gate-to-Drain Charge 7.2 I = 12A D Q Gate Charge Overdrive 5.5 See Fig. 16 godr Q Switch Charge (Q + Q ) 9.1 sw gs2 gd Q oss Output Charge 13 nC V = 10V, V = 0V DS GS t d(on) Turn-On Delay Time 14 V = 10V, V = 4.5V DD GS t r Rise Time 14 ns I = 12A D t d(off) Turn-Off Delay Time 5.8 Clamped Inductive Load t Fall Time 16 f C Input Capacitance 2830 V = 0V iss GS C Output Capacitance 920 pF V = 10V oss DS C rss Reverse Transfer Capacitance 420 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E mJ AS 460 Avalanche Current I 12 A AR Repetitive Avalanche Energy E AR 8.9 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 120 I D S Continuous Source Current MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 460 integral reverse SM S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t rr Reverse Recovery Time 22 33 ns T = 25C, I = 12A, V = 10V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 13 19 nC t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com