IRLR3802PbF IRLU3802PbF HEXFET Power MOSFET Applications High Frequency 3.3V and 5V input Point- V R max Q DSS DS(on) g of-Load Synchronous Buck Converters 12V 8.5m 27nC Power Management for Netcom, Computing and Portable Applications. Lead-Free Benefits Ultra-Low Gate Impedance Very Low R DS(on) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRLR3802 IRLU3802 Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-Source Voltage 12 V DS V Gate-to-Source Voltage 12 V GS I T = 25C Continuous Drain Current, V 4.5V 84 D C GS I T = 100C Continuous Drain Current, V 4.5V 60 A D C GS I Pulsed Drain Current 320 DM P T = 25C Maximum Power Dissipation 88 W D C P T = 100C Maximum Power Dissipation 44 W D C Linear Derating Factor 0.59 mW/C T , T Junction and Storage Temperature Range -55 to + 175 C J STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.7 JC R Junction-to-Ambient (PCB mount)* 40 C/W JA R Junction-to-Ambient 110 JA Notes through are on page 9 www.irf.com 1 12/7/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 12 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.009 V/C Reference to 25C, I = 1mA DSS J D 6.5 8.5 V = 4.5V, I = 15A GS D R Static Drain-to-Source On-Resistance m DS(on) 30 V = 2.8V, I = 12A GS D V Gate Threshold Voltage 0.6 1.9 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -3.2 mV/C GS(th) J 100 V = 9.6V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 9.6V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 12V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -12V GS g Forward Transconductance 31 S V = 6.0V, I = 12A fs DS D Q Total Gate Charge 27 41 g Q Pre-Vth Gate-Source Charge 3.6 V = 6.0V gs1 DS Q Post-Vth Gate-Source Charge 2.0 V = 5.0V gs2 GS Q Gate-to-Drain Charge 10 nC I = 6.0A gd D Q Gate Charge Overdrive 11 See Fig.16 godr Q Switch Charge (Q + Q ) 12 sw gs2 gd Q Output Charge 28 nC V = 10V, V = 0V oss DS GS t Turn-On Delay Time 11 V = 6.0V, V = 4.5V d(on) DD GS t Rise Time 14 ns I = 12A r D t Turn-Off Delay Time 21 Clamped Inductive Load d(off) t Fall Time 17 f C Input Capacitance 2490 V = 0V iss GS C Output Capacitance 2150 pF V = 6.0V oss DS C Reverse Transfer Capacitance 530 = 1.0MHz rss Avalanche Characteristics Symbol Parameter Typ. Max. Units E Single Pulse Avalanche Energy 300 mJ AS I Avalanche Current 20 A AR Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 84 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 320 S (Body Diode) p-n junction diode. 0.81 1.2 V T = 25C, I = 12A, V = 0V J S GS V Diode Forward Voltage SD 0.65 T = 125C, I = 12A, V = 0V J S GS t Reverse Recovery Time 52 78 ns T = 25C, I = 12A, V =20V rr J F R Q Reverse Recovery Charge 54 81 nC di/dt = 100A/s rr t Reverse Recovery Time 50 75 ns T = 125C, I = 12A, V =20V rr J F R Q Reverse Recovery Charge 50 75 nC di/dt = 100A/s rr 2 www.irf.com