PD - 95090B IRLR3915PbF IRLU3915PbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V = 55V 175C Operating Temperature DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 14m DS(on) Lead-Free G Description I = 30A D S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. I-Pak D-Pak IRLR3915PbF IRLU3915PbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon limited) 61 D C GS I T = 100C Continuous Drain Current, V 10V (See Fig.9) 43 A D C GS I T = 25C Continuous Drain Current, V 10V (Package limited) 30 D C GS I Pulsed Drain Current 240 DM P T = 25C Power Dissipation 120 W D C Linear Derating Factor 0.77 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy 200 mJ AS E (6 sigma) Single Pulse Avalanche Energy Tested Value 600 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.3 JC R Junction-to-Ambient (PCB mount) 50 C/W JA R Junction-to-Ambient 110 JA HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 12 14 V = 10V, I = 30A DS(on) GS D m 14 17 V = 5.0V, I = 26A GS D V Gate Threshold Voltage 1.0 3.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 42 S V = 25V, I = 30A fs DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 250 V = 55V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 16V GS I GSS nA Gate-to-Source Reverse Leakage -200 V = -16V GS Q Total Gate Charge 61 92 I = 30A g D Q Gate-to-Source Charge 9.0 14 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 17 25 V = 10V gd GS t Turn-On Delay Time 7.4 V = 28V d(on) DD ns t Rise Time 51 I = 30A r D t Turn-Off Delay Time 83 R = 8.5 d(off) G t Fall Time 100 V = 10V f GS D Between lead, L Internal Drain Inductance D 4.5 nH 6mm (0.25in.) G L Internal Source Inductance from package 7.5 S and center of die contact S C Input Capacitance 1870 V = 0V iss GS C Output Capacitance 390 V = 25V oss DS C Reverse Transfer Capacitance 74 pF = 1.0MHz, See Fig. 5 rss C Output Capacitance 2380 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 290 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 540 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 61 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 240 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 30A, V = 0V SD J S GS t Reverse Recovery Time 62 93 ns T = 25C, I = 30A, V = 25xjkl V rr J F DD Q Reverse Recovery Charge 110 170 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com