IRLR6225PbF HEXFET Power MOSFET V 20 V DS D R DS(on) max 4.0 m ( V = 4.5V) GS R DS(on) max 5.2 m G ( V = 2.5V) GS Q 48 g (typical) nC D-Pak S IRLR6225PbF R 2.2 G (typical) I 42 A D GD S Gate Drain Source Applications Battery Protection Switch Features and Benefits Features Benefits Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques results in Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRLR6225PbF D-PAK Tube/Bulk 75 IRLR6225TRPbF D-PAK Tape and Reel 2000 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 20 DS V V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 10V 100 D C GS I T = 100C Continuous Drain Current, V 10V 63 A D C GS Pulsed Drain Current I 400 DM Power Dissipation P T = 25C 63 D C W Power Dissipation P T = 100C 25 D C Linear Derating Factor 0.5 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Notes through are on page 8 www.irf.com 1 11/15/2010 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V / T Breakdown Voltage Temp. Coefficient 6.6 mV/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 3.2 4.0 V = 4.5V, I = 21A DS(on) GS D m 4.2 5.2 V = 2.5V, I = 17A GS D V Gate Threshold Voltage 0.5 0.8 1.1 V GS(th) V = V , I = 50A DS GS D V Gate Threshold Voltage Coefficient -4.0 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 16V, V = 0V DSS DS GS A 150 V = 16V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS gfs Forward Transconductance 205 S V = 10V, I = 21A DS D Q Total Gate Charge 48 72 g Q Pre-Vth Gate-to-Source Charge 2.6 V = 10V gs1 DS Q Post-Vth Gate-to-Source Charge 3.6 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 19 I = 17A gd D Q Gate Charge Overdrive 23 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 23 sw gs2 gd Q Output Charge 21 nC V = 16V, V = 0V oss DS GS R Gate Resistance 2.2 G t Turn-On Delay Time 9.7 V = 10V, V = 4.5V d(on) DD GS t Rise Time 37 I = 17A r D ns t Turn-Off Delay Time 63 R =1.8 d(off) G t Fall Time 52 See Fig.15 f C Input Capacitance 3770 V = 0V iss GS C Output Capacitance 915 V = 10V pF oss DS C Reverse Transfer Capacitance 650 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 170 mJ AS Avalanche Current I 17 A AR Repetitive Avalanche Energy E 6.3 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 17A, V = 0V SD J S GS t Reverse Recovery Time 35 53 ns T = 25C, I = 17A, V = 10V rr J F DD Q di/dt = 200A/s Reverse Recovery Charge 57 86 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 2.0 JC Junction-to-Ambient (PCB Mount) R 50 JA C/W Junction-to-Ambient R 110 JA 2 www.irf.com