IRLR7833PbF IRLU7833PbF HEXFET Power MOSFET Applications V R max Qg DSS DS(on) High Frequency Synchronous Buck Converters for Computer Processor Power 4.5m 30V 33nC High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits Very Low RDS(on) at 4.5V V GS D-Pak I-Pak Ultra-Low Gate Impedance IRLR7833PbF IRLU7833PbF Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 30 V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 140 I T = 25C C GS D Continuous Drain Current, V 10V 99 I T = 100C A C GS D Pulsed Drain Current I 560 DM Maximum Power Dissipation P T = 25C C 140 W D Maximum Power Dissipation P T = 100C 71 C D Linear Derating Factor 0.95 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.05 JC Junction-to-Ambient (PCB Mount) R 50 C/W JA R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 05/19/09 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V / T DSS J Breakdown Voltage Temp. Coefficient 19 mV/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 3.6 4.5 V = 10V, I = 15A GS D m 4.4 5.5 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.4 2.3 V V = V , I = 250A GS(th) DS GS D V / T Gate Threshold Voltage Coefficient -6.0 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 66 S V = 15V, I = 12A DS D Q g Total Gate Charge 33 50 Q Pre-Vth Gate-to-Source Charge 8.7 V = 16V gs1 DS Q Post-Vth Gate-to-Source Charge 2.1 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 13 I = 12A gd D Q godr Gate Charge Overdrive 9.9 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 15 Q oss Output Charge 22 nC V = 16V, V = 0V DS GS t d(on) Turn-On Delay Time 14 V = 15V, V = 4.5V DD GS t r Rise Time 6.9 I = 12A D ns t Turn-Off Delay Time 23 Clamped Inductive Load d(off) t Fall Time 15 f C Input Capacitance 4010 V = 0V iss GS C oss Output Capacitance 950 pF V = 15V DS C rss Reverse Transfer Capacitance 470 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 530 mJ Avalanche Current I AR 20 A Repetitive Avalanche Energy E AR 14 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 140 I D Continuous Source Current MOSFET symbol S (Body Diode) A showing the G I SM Pulsed Source Current 560 integral reverse S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t rr Reverse Recovery Time 39 58 ns T = 25C, I = 12A, V = 15V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 37 55 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com