IRLR7843TRPBF Infineon

IRLR7843PbF IRLU7843PbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck V R max Qg DSS DS(on) Converters for Computer Processor Power High Frequency Isolated DC-DC 3.3m 30V 34nC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits Very Low RDS(on) at 4.5V V GS Ultra-Low Gate Impedance D-Pak I-Pak Fully Characterized Avalanche Voltage IRLR7843PbF IRLU7843PbF and Current Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 161 I T = 25C GS C D Continuous Drain Current, V 10V 113 I T = 100C A C GS D Pulsed Drain Current I 620 DM Maximum Power Dissipation P T = 25C 140 W C D Maximum Power Dissipation P T = 100C 71 D C Linear Derating Factor 0.95 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.05 JC Junction-to-Ambient (PCB Mount) R JA 50 C/W R JA Junction-to-Ambient 110 Notes through are on page 11 www.irf.com 1 04/30/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 19 mV/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 2.6 3.3 V = 10V, I = 15A GS D 3.2 4.0 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.4 2.3 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.4 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DSS DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 37 S V = 15V, I = 12A DS D Q g Total Gate Charge 34 50 Q gs1 Pre-Vth Gate-to-Source Charge 9.1 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 2.5 nC V = 4.5V GS Q Gate-to-Drain Charge 12 I = 12A gd D Q Gate Charge Overdrive 10 See Fig. 16 godr Q Switch Charge (Q + Q ) 15 sw gs2 gd Q oss Output Charge 21 nC V = 15V, V = 0V DS GS t d(on) Turn-On Delay Time 25 V = 15V, V = 4.5V DD GS t r Rise Time 42 I = 12A D t d(off) Turn-Off Delay Time 34 ns Clamped Inductive Load t f Fall Time 19 C Input Capacitance 4380 V = 0V iss GS C Output Capacitance 940 pF V = 15V oss DS C Reverse Transfer Capacitance 430 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 1440 mJ Avalanche Current I AR 12 A Repetitive Avalanche Energy E AR 14 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions 161 I Continuous Source Current MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 620 integral reverse SM (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t rr Reverse Recovery Time 39 59 ns T = 25C, I = 12A, V = 15V J F DD Q di/dt = 100A/s rr Reverse Recovery Charge 36 54 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com