IRLR8259PbF IRLU8259PbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Processor Power V R max Qg DSS DS(on) High Frequency Isolated DC-DC 25V 8.7m 6.8nC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits Very Low RDS(on) at 4.5V V GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage D-Pak I-Pak IRLR8259PbF IRLU8259PbF and Current Lead-Free GD S RoHS compliant Gate Drain Source Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 25 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 57 I T = 25C C GS D I T = 100C Continuous Drain Current, V 10V 40 A GS D C Pulsed Drain Current I 230 DM Maximum Power Dissipation P T = 25C 48 W C D Maximum Power Dissipation P T = 100C 24 D C Linear Derating Factor 0.32 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.15 JC Junction-to-Ambient (PCB Mount) R JA 50 C/W R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 12/16/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV 25 V V = 0V, I = 250A DSS Drain-to-Source Breakdown Voltage GS D V / T 18 mV/C Reference to 25C, I = 1mA DSS J Breakdown Voltage Temp. Coefficient D R 6.3 8.7 V = 10V, I = 21A DS(on) Static Drain-to-Source On-Resistance GS D m 10.6 12.9 V = 4.5V, I = 17A GS D V 1.35 1.90 2.35 V = V , I = 25A GS(th) Gate Threshold Voltage V DS GS D V / T GS(th) J -7.1 mV/C Gate Threshold Voltage Coefficient I DSS 1.0 V = 20V, V = 0V Drain-to-Source Leakage Current DS GS A 150 V = 20V, V = 0V, T = 125C DS GS J I 100 V = 20V GSS Gate-to-Source Forward Leakage GS nA -100 V = -20V Gate-to-Source Reverse Leakage GS gfs 55 S V = 13V, I = 17A Forward Transconductance DS D Q 6.8 10 g Total Gate Charge Q 1.5 V = 13V gs1 Pre-Vth Gate-to-Source Charge DS Q gs2 1.1 nC V = 4.5V Post-Vth Gate-to-Source Charge GS Q gd 2.4 I = 17A Gate-to-Drain Charge D Q godr 1.8 See Fig. 16 Gate Charge Overdrive Q Switch Charge (Q + Q ) 3.5 sw gs2 gd Q 5.9 nC V = 16V, V = 0V oss Output Charge DS GS R Gate Resistance 2.2 3.6 G t 8.4 V = 13V, V = 4.5V d(on) Turn-On Delay Time DD GS t r Rise Time 38 I = 17A D ns t d(off) 9.1 R = 1.8 Turn-Off Delay Time G t f 8.9 See Fig. 14 Fall Time C iss 900 V = 0V Input Capacitance GS C 300 pF V = 13V oss Output Capacitance DS C 110 = 1.0MHz rss Reverse Transfer Capacitance Avalanche Characteristics Parameter Typ. Max. Units E 67 mJ AS Single Pulse Avalanche Energy I 17 A AR Avalanche Current E AR 4.8 mJ Repetitive Avalanche Energy Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S MOSFET symbol Continuous Source Current 56 (Body Diode) showing the A I integral reverse SM Pulsed Source Current 230 (Body Diode) p-n junction diode. V 1.0 V T = 25C, I = 17A, V = 0V SD Diode Forward Voltage J S GS t 17 26 ns T = 25C, I = 17A, V = 13V rr Reverse Recovery Time J F DD Q 15 23 nC di/dt = 200A/s rr Reverse Recovery Charge t on Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Forward Turn-On Time 2 www.irf.com