IRLR9343PbF IRLU9343PbF IRLU9343-701PbF Features Advanced Process Technology Key Parameters Key Parameters Optimized for Class-D Audio Amplifier Applications V -55 V DS Low R for Improved Efficiency DSON R typ. V = -10V m 93 DS(ON) GS Low Q and Q for Better THD and Improved g sw R typ. V = -4.5V m 150 DS(ON) GS Efficiency Q typ. Low Q for Better THD and Lower EMI 31 nC g rr 175C Operating Junction Temperature for T max 175 C J Ruggedness Repetitive Avalanche Capability for Robustness and D Reliability Multiple Package Options Lead-Free D-Pak I-Pak G IRLR9343 IRLU9343 I-Pak Leadform 701 S IRLU9343-701 Refer to page 10 for package outline Description This Digital Audio HEXFET is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage -55 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V -10V -20 A D C GS I T = 100C Continuous Drain Current, V 10V -14 D C GS Pulsed Drain Current I -60 DM P T = 25C Power Dissipation 79 W D C P T = 100C Power Dissipation 39 D C Linear Derating Factor 0.53 W/C T Operating Junction and -40 to + 175 C J T Storage Temperature Range STG Clamping Pressure N Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 1.9 JC Junction-to-Ambient (PCB Mounted) R 50 C/W JA Junction-to-Ambient (free air) R 110 JA Notes through are on page 10 www.irf.com 1 12/07/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A DSS GS D V /T Breakdown Voltage Temp. Coefficient -52 mV/C Reference to 25C, I = -1mA DSS J D m R Static Drain-to-Source On-Resistance 93 105 V = -10V, I = -3.4A DS(on) GS D 150 170 V = -4.5V, I = -2.7A GS D V Gate Threshold Voltage -1.0 V V = V , I = -250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -3.7 mV/C GS(th) J I Drain-to-Source Leakage Current -2.0 A V = -55V, V = 0V DSS DS GS -25 V = -55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage -100 nA V = -20V GSS GS Gate-to-Source Reverse Leakage 100 V = 20V GS g Forward Transconductance 5.3 S V = -25V, I = -14A fs DS D Q Total Gate Charge 31 47 V = -44V g DS Q V = -10V Gate-to-Source Charge 7.1 gs GS Q Gate-to-Drain Charge 8.5 I = -14A gd D Q Gate Charge Overdrive 15 See Fig. 6 and 19 godr t Turn-On Delay Time 9.5 V = -28V, V = -10V d(on) DD GS t Rise Time 24 I = -14A r D t Turn-Off Delay Time 21 ns R = 2.5 d(off) G t Fall Time 9.5 f C Input Capacitance 660 V = 0V iss GS C Output Capacitance 160 pF V = -50V oss DS C Reverse Transfer Capacitance 72 = 1.0MHz, See Fig.5 rss C Effective Output Capacitance 280 V = 0V, V = 0V to -44V oss GS DS L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) L Internal Source Inductance 7.5 from package S and center of die contact Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 120 mJ AS Avalanche Current I See Fig. 14, 15, 17a, 17b A AR Repetitive Avalanche Energy E mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I T = 25C Continuous Source Current -20 MOSFET symbol S C (Body Diode) A showing the G I Pulsed Source Current -60 integral reverse SM (Body Diode) S p-n junction diode. V Diode Forward Voltage -1.2 V T = 25C, I = -14A, V = 0V SD J S GS t Reverse Recovery Time 57 86 ns T = 25C, I = -14A rr J F Q di/dt = 100A/s Reverse Recovery Charge 120 180 nC rr 2 www.irf.com